Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy

Y. Tsukidate; M. Suemitsu

doi:10.1016/S0169-4332(01)00054-X

Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy

Y. Tsukidate, M. Suemitsu

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The surface chemistry of Si during gas-source molecular beam epitaxy (GSMBE) doped with phosphorus (P) has been investigated in detail, by obtaining the hydrogen (H) and P coverages on the growing surface by silane (SiH ₄ ) and phosphine (PH ₃ ). The low temperature region of doped epitaxy was found to consist of two domains: domain I (550 < T < 650°C) rate limited by P desorption and domain II rate limited by both H and P desorptions. Growth rates in the high temperature region (T > 650°C) increased with mild P dopings, which is related to enhanced sticking probability at Si sites in the presence of surface P. The P coverage on the growing surface was some three orders of magnitude greater than that in the bulk, suggesting rapid surface segregation as a major cause for doping limitation.

Original language	English
Pages (from-to)	43-48
Number of pages	6
Journal	Applied Surface Science
Volume	175-176
DOIs	https://doi.org/10.1016/S0169-4332(01)00054-X
Publication status	Published - 2001 May 15
Externally published	Yes

Keywords

Epitaxy
GSMBE
Hydrogen
In situ doping
Phosphorus
Silicon

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(01)00054-X

Cite this

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title = "Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy",

abstract = " The surface chemistry of Si during gas-source molecular beam epitaxy (GSMBE) doped with phosphorus (P) has been investigated in detail, by obtaining the hydrogen (H) and P coverages on the growing surface by silane (SiH 4 ) and phosphine (PH 3 ). The low temperature region of doped epitaxy was found to consist of two domains: domain I (550 < T < 650°C) rate limited by P desorption and domain II rate limited by both H and P desorptions. Growth rates in the high temperature region (T > 650°C) increased with mild P dopings, which is related to enhanced sticking probability at Si sites in the presence of surface P. The P coverage on the growing surface was some three orders of magnitude greater than that in the bulk, suggesting rapid surface segregation as a major cause for doping limitation.",

keywords = "Epitaxy, GSMBE, Hydrogen, In situ doping, Phosphorus, Silicon",

author = "Y. Tsukidate and M. Suemitsu",

note = "Funding Information: This work was supported in part by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science, Sports and Culture, Japan. One of the authors (Y. Tsukidate) is a JSPS Research Fellow, and is grateful to JSPS for its financial support.",

year = "2001",

month = may,

day = "15",

doi = "10.1016/S0169-4332(01)00054-X",

language = "English",

volume = "175-176",

pages = "43--48",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

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TY - JOUR

T1 - Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy

AU - Tsukidate, Y.

AU - Suemitsu, M.

N1 - Funding Information: This work was supported in part by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science, Sports and Culture, Japan. One of the authors (Y. Tsukidate) is a JSPS Research Fellow, and is grateful to JSPS for its financial support.

PY - 2001/5/15

Y1 - 2001/5/15

N2 - The surface chemistry of Si during gas-source molecular beam epitaxy (GSMBE) doped with phosphorus (P) has been investigated in detail, by obtaining the hydrogen (H) and P coverages on the growing surface by silane (SiH 4 ) and phosphine (PH 3 ). The low temperature region of doped epitaxy was found to consist of two domains: domain I (550 < T < 650°C) rate limited by P desorption and domain II rate limited by both H and P desorptions. Growth rates in the high temperature region (T > 650°C) increased with mild P dopings, which is related to enhanced sticking probability at Si sites in the presence of surface P. The P coverage on the growing surface was some three orders of magnitude greater than that in the bulk, suggesting rapid surface segregation as a major cause for doping limitation.

AB - The surface chemistry of Si during gas-source molecular beam epitaxy (GSMBE) doped with phosphorus (P) has been investigated in detail, by obtaining the hydrogen (H) and P coverages on the growing surface by silane (SiH 4 ) and phosphine (PH 3 ). The low temperature region of doped epitaxy was found to consist of two domains: domain I (550 < T < 650°C) rate limited by P desorption and domain II rate limited by both H and P desorptions. Growth rates in the high temperature region (T > 650°C) increased with mild P dopings, which is related to enhanced sticking probability at Si sites in the presence of surface P. The P coverage on the growing surface was some three orders of magnitude greater than that in the bulk, suggesting rapid surface segregation as a major cause for doping limitation.

KW - Epitaxy

KW - GSMBE

KW - Hydrogen

KW - In situ doping

KW - Phosphorus

KW - Silicon

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U2 - 10.1016/S0169-4332(01)00054-X

DO - 10.1016/S0169-4332(01)00054-X

M3 - Article

AN - SCOPUS:18344409059

SN - 0169-4332

VL - 175-176

SP - 43

EP - 48

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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