Growth kinetics and doping mechanism in phosphorus-doped Si gas-source molecular beam epitaxy

Y. Tsukidate, M. Suemitsu

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

The surface chemistry of Si during gas-source molecular beam epitaxy (GSMBE) doped with phosphorus (P) has been investigated in detail, by obtaining the hydrogen (H) and P coverages on the growing surface by silane (SiH 4 ) and phosphine (PH 3 ). The low temperature region of doped epitaxy was found to consist of two domains: domain I (550 < T < 650°C) rate limited by P desorption and domain II rate limited by both H and P desorptions. Growth rates in the high temperature region (T > 650°C) increased with mild P dopings, which is related to enhanced sticking probability at Si sites in the presence of surface P. The P coverage on the growing surface was some three orders of magnitude greater than that in the bulk, suggesting rapid surface segregation as a major cause for doping limitation.

Original languageEnglish
Pages (from-to)43-48
Number of pages6
JournalApplied Surface Science
Volume175-176
DOIs
Publication statusPublished - 2001 May 15

Keywords

  • Epitaxy
  • GSMBE
  • Hydrogen
  • In situ doping
  • Phosphorus
  • Silicon

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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