Abstract
The growth control of pentacene thin films on SiO2/Si substrates is investigated by focusing on the relationship between the grain structure and flatness of the film surface. Pentacene thin films showing various grain structures are reproducibly controlled by changing the evaporation flux rate and substrate temperature. Atomic force microscopy analysis of the film surface indicates that the surface roughness is strongly related to the growth condition. In addition, flat-topped grains grown layer by layer are obtained among controlled grain structures, and a maximum grain size of 25 μm 2 is obtained. The surface roughness significantly decreases for the flat-topped grain.
Original language | English |
---|---|
Pages (from-to) | 168-171 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 467 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 2004 Nov 22 |
Externally published | Yes |
Keywords
- Pentacene thin films
- Surface morphology
- Surface roughness
- Thermal evaporation
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry