Growth control of pentacene films on SiO2/Si substrates towards formation of flat conduction layers

Iwao Yagi, Kazuhito Tsukagoshi, Yoshinobu Aoyagi

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


The growth control of pentacene thin films on SiO2/Si substrates is investigated by focusing on the relationship between the grain structure and flatness of the film surface. Pentacene thin films showing various grain structures are reproducibly controlled by changing the evaporation flux rate and substrate temperature. Atomic force microscopy analysis of the film surface indicates that the surface roughness is strongly related to the growth condition. In addition, flat-topped grains grown layer by layer are obtained among controlled grain structures, and a maximum grain size of 25 μm 2 is obtained. The surface roughness significantly decreases for the flat-topped grain.

Original languageEnglish
Pages (from-to)168-171
Number of pages4
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 2004 Nov 22
Externally publishedYes


  • Pentacene thin films
  • Surface morphology
  • Surface roughness
  • Thermal evaporation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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