Growth control of pentacene films on SiO2/Si substrates towards formation of flat conduction layers

Iwao Yagi; Kazuhito Tsukagoshi; Yoshinobu Aoyagi

doi:10.1016/j.tsf.2004.03.011

Growth control of pentacene films on SiO₂/Si substrates towards formation of flat conduction layers

Iwao Yagi, Kazuhito Tsukagoshi, Yoshinobu Aoyagi

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The growth control of pentacene thin films on SiO₂/Si substrates is investigated by focusing on the relationship between the grain structure and flatness of the film surface. Pentacene thin films showing various grain structures are reproducibly controlled by changing the evaporation flux rate and substrate temperature. Atomic force microscopy analysis of the film surface indicates that the surface roughness is strongly related to the growth condition. In addition, flat-topped grains grown layer by layer are obtained among controlled grain structures, and a maximum grain size of 25 μm ² is obtained. The surface roughness significantly decreases for the flat-topped grain.

Original language	English
Pages (from-to)	168-171
Number of pages	4
Journal	Thin Solid Films
Volume	467
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2004.03.011
Publication status	Published - 2004 Nov 22
Externally published	Yes

Keywords

Pentacene thin films
Surface morphology
Surface roughness
Thermal evaporation

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2004.03.011

Cite this

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title = "Growth control of pentacene films on SiO2/Si substrates towards formation of flat conduction layers",

abstract = "The growth control of pentacene thin films on SiO2/Si substrates is investigated by focusing on the relationship between the grain structure and flatness of the film surface. Pentacene thin films showing various grain structures are reproducibly controlled by changing the evaporation flux rate and substrate temperature. Atomic force microscopy analysis of the film surface indicates that the surface roughness is strongly related to the growth condition. In addition, flat-topped grains grown layer by layer are obtained among controlled grain structures, and a maximum grain size of 25 μm 2 is obtained. The surface roughness significantly decreases for the flat-topped grain.",

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author = "Iwao Yagi and Kazuhito Tsukagoshi and Yoshinobu Aoyagi",

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T1 - Growth control of pentacene films on SiO2/Si substrates towards formation of flat conduction layers

AU - Yagi, Iwao

AU - Tsukagoshi, Kazuhito

AU - Aoyagi, Yoshinobu

PY - 2004/11/22

Y1 - 2004/11/22

N2 - The growth control of pentacene thin films on SiO2/Si substrates is investigated by focusing on the relationship between the grain structure and flatness of the film surface. Pentacene thin films showing various grain structures are reproducibly controlled by changing the evaporation flux rate and substrate temperature. Atomic force microscopy analysis of the film surface indicates that the surface roughness is strongly related to the growth condition. In addition, flat-topped grains grown layer by layer are obtained among controlled grain structures, and a maximum grain size of 25 μm 2 is obtained. The surface roughness significantly decreases for the flat-topped grain.

AB - The growth control of pentacene thin films on SiO2/Si substrates is investigated by focusing on the relationship between the grain structure and flatness of the film surface. Pentacene thin films showing various grain structures are reproducibly controlled by changing the evaporation flux rate and substrate temperature. Atomic force microscopy analysis of the film surface indicates that the surface roughness is strongly related to the growth condition. In addition, flat-topped grains grown layer by layer are obtained among controlled grain structures, and a maximum grain size of 25 μm 2 is obtained. The surface roughness significantly decreases for the flat-topped grain.

KW - Pentacene thin films

KW - Surface morphology

KW - Surface roughness

KW - Thermal evaporation

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