Growth conditions and morphology of GaN single crystals fabricated by the Na flux method

Masato Aoki, Hisanori Yamane, Masahiko Shimada, Seiji Sarayama, Francis J. Disalvo

    Research output: Contribution to journalArticlepeer-review

    12 Citations (Scopus)

    Abstract

    Crystal growth of GaN was carried out by the Na flux method at 700-850°C and 1-5 MPa of N2 for 200 h. At higher temperatures and lower pressures, only Na-Ga intermetallic compounds are formed. At higher pressures or lower temperatures, the morphology of GaN single crystals depends on the experimental conditions. Hexagonal platelet crystals were obtained at lower temperature and higher N2 pressure, and hexagonal prismatic crystals grew at higher temperature and lower N2 pressure. Colorless transparent prismatic single crystals with a size of 1.0 × 0.5 × 0.5 mm3 were synthesized by slowly increasing the growth temperature at a rate of 0.5°C/h from 750 to 800°C under 3 MPa of N2.

    Original languageEnglish
    Pages (from-to)858-862
    Number of pages5
    JournalJournal of the Ceramic Society of Japan
    Volume109
    Issue number1274
    DOIs
    Publication statusPublished - 2001 Oct

    Keywords

    • Crystal morphology
    • GaN
    • Growth condition
    • Na flux
    • Single crystal

    ASJC Scopus subject areas

    • Ceramics and Composites
    • Chemistry(all)
    • Condensed Matter Physics
    • Materials Chemistry

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