Growth behavior of self-formed barrier using Cu-Mn alloys at 350 to 600°C

J. Iijima, M. Haneda, J. Koike

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Citations (Scopus)

Abstract

Cu-Mn alloys were deposited on plasma TEOS dielectric layer. A diffusion barrier layer was self-formed at the interface during annealing at elevated temperatures. The growth behavior followed a logarithmic rate law at 350 and 450°C. No interdiffusion occurred between the alloy film and TEOS after annealing at these temperatures for 100 h. At 600°C, grain-boundary grooving of the alloy film occurred on the barrier interface side. Estimated diffusivity at the alloy/barrier interface was of the same order as grain-boundary diffusivity of Cu.

Original languageEnglish
Title of host publication2006 International Interconnect Technology Conference, IITC
Pages155-158
Number of pages4
DOIs
Publication statusPublished - 2006 Dec 1
Event2006 International Interconnect Technology Conference, IITC - Burlingame, CA, United States
Duration: 2006 Jun 52006 Jun 7

Publication series

Name2006 International Interconnect Technology Conference, IITC

Other

Other2006 International Interconnect Technology Conference, IITC
CountryUnited States
CityBurlingame, CA
Period06/6/506/6/7

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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    Iijima, J., Haneda, M., & Koike, J. (2006). Growth behavior of self-formed barrier using Cu-Mn alloys at 350 to 600°C. In 2006 International Interconnect Technology Conference, IITC (pp. 155-158). [1648675] (2006 International Interconnect Technology Conference, IITC). https://doi.org/10.1109/IITC.2006.1648675