A diffusion barrier layer was self-formed at the interface between Cu-Mn alloy and tetraethylorthosilicate oxide layers at 250-450°C. No interdiffusion occurred across the self-formed barrier layer during annealing at these temperatures up to 100 h. The growth of the barrier layer obeyed a logarithmic law and depended on manganese concentration. The barrier thickness could be controlled in the range of 2-8 nm.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)