Growth behavior of self-formed barrier at Cu-Mn/SiO2 interface at 250-450°C

M. Haneda, J. Iijima, J. Koike

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96 Citations (Scopus)


A diffusion barrier layer was self-formed at the interface between Cu-Mn alloy and tetraethylorthosilicate oxide layers at 250-450°C. No interdiffusion occurred across the self-formed barrier layer during annealing at these temperatures up to 100 h. The growth of the barrier layer obeyed a logarithmic law and depended on manganese concentration. The barrier thickness could be controlled in the range of 2-8 nm.

Original languageEnglish
Article number252107
JournalApplied Physics Letters
Issue number25
Publication statusPublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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