Growth behavior of Bi and Nb Co-added-SrTiO3 thin film exhibiting varistor characteristics by metal-organic chemical vapor deposition

Kazuo Shinozaki, Mitsunori Sugiura, Daisuke Nagano, Takanori Kiguchi, Naoki Wakiya, Nobuyasu Mizutani

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Nb-doped semiconductive SrTiO3 film and Bi and Nb co-added SrTiO3 film were grown on (001) MgO sub-strates by metal-organic chemical vapor deposition (MOCVD). The (001)-oriented SrTiO3 phase was grown epitaxially with cube-on-cube structure in relation to the MgO substrate. In the ease of the Nb-doped SrTiO3 film, the film exhibited a semiconductive nature with a low electrical resistivity (0.11 Ω · cm) that is three orders of magnitude lower than that in bulk SrTiOa ceramics by adding a much higher Nb addition (1.6-3.5 mol%). Most of the added Nb is thought to substitute for the Ti4+ as valence 4+, as suggested by the dependency of the cell volume change. In the case of Bi and Nb co-added SrTiO3 film, the lattice parameter was somewhat increased with the addition of Bi, but the amount of Bi was undetectable. The addition of Bi did not produce a thin film with nonlinear electrical resistivity. Introducing a SrO seed layer with ∼2 nm thickness onto (001) MgO substrate produced weak nonlinear I-V (varistor) properties. It might be thought that the grain boundary between the two kinds of in-plane oriented grains, i.e., 45° rotating and cube-on-cube grains, acts as a barrier against varistor characteristics.

Original languageEnglish
Pages (from-to)416-420
Number of pages5
JournalJournal of the Ceramic Society of Japan
Volume110
Issue number1281
DOIs
Publication statusPublished - 2002 May

Keywords

  • LaAlO
  • MOCVD
  • Metal-organic chemical vapor deposition
  • MgO
  • Nb and Bi co-added
  • SrTiO
  • Thin film
  • Varistor

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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