Growth and structural properties of indium doped SrTiO3 films by pulsed laser deposition

Yi Wen Zhang, Xiao Min Li, Jun Liang Zhao, Wei Dong Yu, Xiang Dong Gao, Feng Wu

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Undoped and In-doped SrTiO3(STO) films were grown on MgO/TiN/Si(100) substrates by pulsed laser deposition(PLD). The growth mechanism, crystallinity, surface morphology, and UV-Raman spectra of the films were studied. Results indicate that undoped STO films show high quality crystalline structure with highly (200) orientation. With Indium doping, the crystallinity of the STO film deteriorate, the first order Raman peaks increase indicating the breaking of crystal symmetry, and the film growth mode change from the layer-by-layer mode to island-layer mixed one, resulting in the roughening of the film surface. Furthermore, the crystallinity and (200) orientation of In-doped STO film can be enhanced significantly by introducing an undoped STO buffer layer.

Original languageEnglish
Pages (from-to)531-534
Number of pages4
JournalWuji Cailiao Xuebao/Journal of Inorganic Materials
Volume23
Issue number3
DOIs
Publication statusPublished - 2008 May
Externally publishedYes

Keywords

  • Buffer layer
  • Crystallinity
  • Pulsed laser deposition
  • SrTiO film

ASJC Scopus subject areas

  • Materials Science(all)
  • Inorganic Chemistry

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