Growth and scintillation properties of Pr Doped (Gd,Y) 3(Ga,Al) 5O 12 single crystals

Kei Kamada, Takayuki Yanagida, Jan Pejchal, Martin Nikl, Takanori Endo, Kousuke Tsutsumi, Yutaka Fujimoto, Akihiro Fukabori, Akira Yoshikawa

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Pr: (Gd,Y) 3(Ga,Al) 5 O 12 single crystals were grown by the μ-PD method with RF heating system. Pr 3+ 5d-4f emission within 300-350 nm, Pr 3+ 4f-4f emission within 480-650 nm and Gd 3+ 4f-4f emission at 310 nm are observed in Pr: (Gd,Y) 3(Ga,Al) 5 O 12 crystals. In order to determine light yield, the energy spectra were measured under 662 keV γ-ray excitation 137 Cs source), detected by a PMT H6521 (Hamamatsu). The light output of Pr1%:Gd 1 Y- 2Ga 3Al 2O 12 sample was of about one fifth of that of the Cz grown Pr:LuAG standard sample, i.e., around 4,000 photon/MeV. Two component scintillation decay shows the decay times (intensity) of 5.7 ns(5%), 38.7 ns (31%) and 187 ns (63%) using the PMT and digital oscilloscope TDS5032B detection.

Original languageEnglish
Article number6327752
Pages (from-to)2126-2129
Number of pages4
JournalIEEE Transactions on Nuclear Science
Volume59
Issue number5 PART 2
DOIs
Publication statusPublished - 2012

Keywords

  • Crystals
  • luminescence
  • solid scintillation detectors

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Growth and scintillation properties of Pr Doped (Gd,Y) <sub>3</sub>(Ga,Al) <sub>5</sub>O <sub>12</sub> single crystals'. Together they form a unique fingerprint.

Cite this