Growth and scintillation properties of Pr Doped (Gd,Y) 3(Ga,Al) 5O 12 single crystals

Kei Kamada; Takayuki Yanagida; Jan Pejchal; Martin Nikl; Takanori Endo; Kousuke Tsutsumi; Yutaka Fujimoto; Akihiro Fukabori; Akira Yoshikawa

doi:10.1109/TNS.2012.2205942

Growth and scintillation properties of Pr Doped (Gd,Y) ₃(Ga,Al) ₅O ₁₂ single crystals

Kei Kamada, Takayuki Yanagida, Jan Pejchal, Martin Nikl, Takanori Endo, Kousuke Tsutsumi, Yutaka Fujimoto, Akihiro Fukabori, Akira Yoshikawa

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Pr: (Gd,Y) ₃(Ga,Al) ₅ O ₁₂ single crystals were grown by the μ-PD method with RF heating system. Pr ³⁺ 5d-4f emission within 300-350 nm, Pr ³⁺ 4f-4f emission within 480-650 nm and Gd ³⁺ 4f-4f emission at 310 nm are observed in Pr: (Gd,Y) ₃(Ga,Al) ₅ O ₁₂ crystals. In order to determine light yield, the energy spectra were measured under 662 keV γ-ray excitation ¹³⁷ Cs source), detected by a PMT H6521 (Hamamatsu). The light output of Pr1%:Gd ₁ Y- ₂Ga ₃Al ₂O ₁₂ sample was of about one fifth of that of the Cz grown Pr:LuAG standard sample, i.e., around 4,000 photon/MeV. Two component scintillation decay shows the decay times (intensity) of 5.7 ns(5%), 38.7 ns (31%) and 187 ns (63%) using the PMT and digital oscilloscope TDS5032B detection.

Original language	English
Article number	6327752
Pages (from-to)	2126-2129
Number of pages	4
Journal	IEEE Transactions on Nuclear Science
Volume	59
Issue number	5 PART 2
DOIs	https://doi.org/10.1109/TNS.2012.2205942
Publication status	Published - 2012

Keywords

Crystals
luminescence
solid scintillation detectors

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/TNS.2012.2205942

Cite this

@article{241a2b658b634f748aa7190091e396c7,

title = "Growth and scintillation properties of Pr Doped (Gd,Y) 3(Ga,Al) 5O 12 single crystals",

abstract = "Pr: (Gd,Y) 3(Ga,Al) 5 O 12 single crystals were grown by the μ-PD method with RF heating system. Pr 3+ 5d-4f emission within 300-350 nm, Pr 3+ 4f-4f emission within 480-650 nm and Gd 3+ 4f-4f emission at 310 nm are observed in Pr: (Gd,Y) 3(Ga,Al) 5 O 12 crystals. In order to determine light yield, the energy spectra were measured under 662 keV γ-ray excitation 137 Cs source), detected by a PMT H6521 (Hamamatsu). The light output of Pr1%:Gd 1 Y- 2Ga 3Al 2O 12 sample was of about one fifth of that of the Cz grown Pr:LuAG standard sample, i.e., around 4,000 photon/MeV. Two component scintillation decay shows the decay times (intensity) of 5.7 ns(5%), 38.7 ns (31%) and 187 ns (63%) using the PMT and digital oscilloscope TDS5032B detection.",

keywords = "Crystals, luminescence, solid scintillation detectors",

author = "Kei Kamada and Takayuki Yanagida and Jan Pejchal and Martin Nikl and Takanori Endo and Kousuke Tsutsumi and Yutaka Fujimoto and Akihiro Fukabori and Akira Yoshikawa",

note = "Funding Information: Manuscript received Nov. 16, 2011; accepted June 20, 2012. Date of current version October 09, 2012. This work was supported in part by JST Sentan; in part by a Grant in Aid for Young Scientists (B)-15686001, (A)-23686135, and Challenging Exploratory Research-23656584 from the Ministry of Education, Culture, Sports, Science and Technology of the Japanese government (MEXT); and in part by Czech AV M100100910 and MSMT, no. 1M06002.",

year = "2012",

doi = "10.1109/TNS.2012.2205942",

language = "English",

volume = "59",

pages = "2126--2129",

journal = "IEEE Transactions on Nuclear Science",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Growth and scintillation properties of Pr Doped (Gd,Y) 3(Ga,Al) 5O 12 single crystals

AU - Kamada, Kei

AU - Yanagida, Takayuki

AU - Pejchal, Jan

AU - Nikl, Martin

AU - Endo, Takanori

AU - Tsutsumi, Kousuke

AU - Fujimoto, Yutaka

AU - Fukabori, Akihiro

AU - Yoshikawa, Akira

N1 - Funding Information: Manuscript received Nov. 16, 2011; accepted June 20, 2012. Date of current version October 09, 2012. This work was supported in part by JST Sentan; in part by a Grant in Aid for Young Scientists (B)-15686001, (A)-23686135, and Challenging Exploratory Research-23656584 from the Ministry of Education, Culture, Sports, Science and Technology of the Japanese government (MEXT); and in part by Czech AV M100100910 and MSMT, no. 1M06002.

PY - 2012

Y1 - 2012

N2 - Pr: (Gd,Y) 3(Ga,Al) 5 O 12 single crystals were grown by the μ-PD method with RF heating system. Pr 3+ 5d-4f emission within 300-350 nm, Pr 3+ 4f-4f emission within 480-650 nm and Gd 3+ 4f-4f emission at 310 nm are observed in Pr: (Gd,Y) 3(Ga,Al) 5 O 12 crystals. In order to determine light yield, the energy spectra were measured under 662 keV γ-ray excitation 137 Cs source), detected by a PMT H6521 (Hamamatsu). The light output of Pr1%:Gd 1 Y- 2Ga 3Al 2O 12 sample was of about one fifth of that of the Cz grown Pr:LuAG standard sample, i.e., around 4,000 photon/MeV. Two component scintillation decay shows the decay times (intensity) of 5.7 ns(5%), 38.7 ns (31%) and 187 ns (63%) using the PMT and digital oscilloscope TDS5032B detection.

AB - Pr: (Gd,Y) 3(Ga,Al) 5 O 12 single crystals were grown by the μ-PD method with RF heating system. Pr 3+ 5d-4f emission within 300-350 nm, Pr 3+ 4f-4f emission within 480-650 nm and Gd 3+ 4f-4f emission at 310 nm are observed in Pr: (Gd,Y) 3(Ga,Al) 5 O 12 crystals. In order to determine light yield, the energy spectra were measured under 662 keV γ-ray excitation 137 Cs source), detected by a PMT H6521 (Hamamatsu). The light output of Pr1%:Gd 1 Y- 2Ga 3Al 2O 12 sample was of about one fifth of that of the Cz grown Pr:LuAG standard sample, i.e., around 4,000 photon/MeV. Two component scintillation decay shows the decay times (intensity) of 5.7 ns(5%), 38.7 ns (31%) and 187 ns (63%) using the PMT and digital oscilloscope TDS5032B detection.

KW - Crystals

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KW - solid scintillation detectors

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