Growth and scintillation properties of (Lu1-x Tm x)2SiO5 [x = 0.001, 0.01, 0.1, 1]

Daisuke Totsuka, Takayuki Yanagida, Yutaka Fujimoto, Yuui Yokota, Akira Yoshikawa

Research output: Contribution to journalArticle

Abstract

(Lu1 - xTmx)2SiO5 (x = 0.001, 0.01, 0.1, 1) single crystalline scintillators were grown by the μ-PD method. In transmittance measurement, absorption bands due to Tm3+ 4f-4f transitions were observed at 260, 292, 356, 463, 680 and 790 nm and they could be ascribed to the transition from the 3H6 ground state to its excited states, 1I6, 3P6, 1D2, 1G4, 3F3 and 3H4, respectively. Strong emission peak due to 1D23F4 transition of Tm 3+ was shown at 453 nm under X-ray irradiation. Photoluminescence decay time constant caused by this transition were evaluated to be 11.9 μs. Tm 1% doped one exhibited the highest light yield of 3530 ± 200 photons/MeV when excited by 137Cs gamma-ray exposure.

Original languageEnglish
Pages (from-to)116-119
Number of pages4
JournalRadiation Measurements
Volume55
DOIs
Publication statusPublished - 2013 Aug 1

Keywords

  • Oxyorthosilicate
  • Scintillator
  • Tm

ASJC Scopus subject areas

  • Radiation
  • Instrumentation

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