TY - JOUR
T1 - Growth and scintillation properties of Eu and Ce doped LiSrI3 single crystals
AU - Kamada, Kei
AU - Yoshino, Masao
AU - Murakami, Rikito
AU - Chiba, Hiroyuki
AU - Yamaji, Akihiro
AU - Shoji, Yasuhiro
AU - Kurosawa, Shunsuke
AU - Yokota, Yuui
AU - Ohashi, Yuji
AU - Kochurikhin, Vladimir V.
AU - Yoshikawa, Akira
N1 - Funding Information:
This work was partially supported by Adaptable & Seamless Technology Transfer Program through Target-driven R&D (A-STEP), JST. In addition, we would like to thank following persons for their support: Mr. Yoshihiro Nakamura in Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University and Mr. Hiroshi Uemura, Ms. Keiko Toguchi and Ms. Megumi Sasaki, Ms. Yuka Takeda in IMR.
Publisher Copyright:
© 2017, Springer Science+Business Media New York.
PY - 2017/9/1
Y1 - 2017/9/1
N2 - In this study, Eu and Ce doped LiSrI3 single crystals were explored and the scintillation performance was reported at the first time. Eu and Ce doped LiSrI3 single crystals were grown by the Bridgman–Stockbarger method in a quartz ampoule with 3 mm inner diameter. Growth rate was 0.06 mm/min. Circular samples with 1 mm thickness were obtained from the grown crystal. The grown Eu doped LiSrI3 crystal demonstrated Eu2+ 4f–5d emission peak at 420 nm under alpha-ray excitation. In the case of Ce doped one, double emission peaks at 360 and 400 nm were observed. The light yield of the Eu doped LiSrI3 was around 35,000 photon/MeV for 662 keV gamma-ray and 24,000 photon/5.5 MeV for alpha-ray. Energy resolution of the Eu doped LiSrI3 was 5.2%@662 keV. Scintillation decay time of the grown Ce and Eu doped LiSrI3 under 662 keV gamma-ray was 23.8 ns (50%) 212 ns (50%) and 545 ns 100%, respectively.
AB - In this study, Eu and Ce doped LiSrI3 single crystals were explored and the scintillation performance was reported at the first time. Eu and Ce doped LiSrI3 single crystals were grown by the Bridgman–Stockbarger method in a quartz ampoule with 3 mm inner diameter. Growth rate was 0.06 mm/min. Circular samples with 1 mm thickness were obtained from the grown crystal. The grown Eu doped LiSrI3 crystal demonstrated Eu2+ 4f–5d emission peak at 420 nm under alpha-ray excitation. In the case of Ce doped one, double emission peaks at 360 and 400 nm were observed. The light yield of the Eu doped LiSrI3 was around 35,000 photon/MeV for 662 keV gamma-ray and 24,000 photon/5.5 MeV for alpha-ray. Energy resolution of the Eu doped LiSrI3 was 5.2%@662 keV. Scintillation decay time of the grown Ce and Eu doped LiSrI3 under 662 keV gamma-ray was 23.8 ns (50%) 212 ns (50%) and 545 ns 100%, respectively.
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U2 - 10.1007/s10854-017-7150-9
DO - 10.1007/s10854-017-7150-9
M3 - Article
AN - SCOPUS:85019699781
VL - 28
SP - 13157
EP - 13160
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
SN - 0957-4522
IS - 17
ER -