Growth and scintillation properties of Ce doped Gd2Si2O7/SiO2 eutectics

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Abstract

Ce:Gd2Si2O7/SiO2 eutectic was grown by the μ-PD method. The square-shape sample with a side of 5 mm and a length of 15 mm was obtained. Two phases of orthorhombic Gd2Si2O7 and SiO2 was observed. Rod-phase was SiO2 and matrix phase was Gd2Si2O7. Ce3+ 4f5d emission have been observed at 400nm. The sample showed light yield of around 16,000 photons/MeV. Scintillation decay time was 46.3ns(21%) 249ns(79%).

Original languageEnglish
Article number012036
JournalJournal of Physics: Conference Series
Volume619
Issue number1
DOIs
Publication statusPublished - 2015 Jun 17
Event6th International Conference on Optical, Optoelectronic and Photonic Materials and Applications, ICOOPMA 2014 - Leeds, United Kingdom
Duration: 2014 Jul 272014 Aug 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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