Growth and properties of (Ga,Mn)As on Si (1 0 0) substrate

J. H. Zhao, F. Matsukura, E. Abe, D. Chiba, Y. Ohno, K. Takamura, H. Ohno

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

Ferromagnetic (Ga,Mn)As epitaxial layers with zincblende structure have been grown on Si (100) substrates employing a three-step method using molecular beam epitaxy. Magnetic measurements reveal that the ferromagnetic transition temperature is 48 K for a layer with a lattice constant of 0.567nm, which corresponds to a nominal Mn composition of 2%. When grown directly on Si without the three-step method, the same set of growth parameters results in a (Ga,Mn)As layer with a ferromagnetic order below 25 K. The difference of magnetic property between these two samples is attributed to the quality of the (Ga,Mn)As layer which originates from the different growth methods.

Original languageEnglish
Pages (from-to)1349-1352
Number of pages4
JournalJournal of Crystal Growth
Volume237-239
Issue number1-4 II
DOIs
Publication statusPublished - 2002 Apr 1

Keywords

  • A1. Substrates
  • A3. Molecular beam epitaxy
  • B2. Ferromagnetic materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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