Growth and properties of (Ga,Mn)As films with high Mn concentration

K. Takamura, Fumihiro Matsukura, Y. Ohno, Hideo Ohno

Research output: Contribution to journalConference articlepeer-review

27 Citations (Scopus)

Abstract

(Ga, Mn)As films with high nominal Mn concentration (0<x<0.55) are grown by low temperature molecular beam epitaxy (LT-MBE), growth temperature Ts=180°C. Reflection high energy electron diffraction patterns indicate epitaxial growth of (Ga, Mn)As forx<0.1, whereas they show spotty patterns for x>0.1, which turn to polycrystalline features when x>0.3. X-ray diffraction shows the formation of MnAs together with the growth of (Ga, Mn)As. The lattice constant of the layers suggests that (Ga, Mn)As with high Mn composition as high as 17% can be grown by LT-MBE.

Original languageEnglish
Pages (from-to)7024-7026
Number of pages3
JournalJournal of Applied Physics
Volume89
Issue number11 II
DOIs
Publication statusPublished - 2001 Jun 1
Event8th Joint Magnetism and Magnetic Materials-Intermag Conference - San Antonio, TX, United States
Duration: 2001 Jan 72001 Jan 11

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

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