TY - JOUR
T1 - Growth and post-growth rapid thermal annealing of InGaPN on GaP grown by metalorganic vapor phase epitaxy
AU - Sanorpim, Sakuntam
AU - Nakajima, Fumihiro
AU - Nakadan, Nobuhiro
AU - Kimura, Tokuharu
AU - Katayama, Ryuji
AU - Onabe, Kentaro
N1 - Funding Information:
The authors would like to thank H. Yaguchi for helpful discussion. Sincere thanks are extended to S. Koh and S. Otake for their technical support. This work has been partly supported by Thailand-Japan Technology Transfer Project-Overseas Economic Cooperation Fund (TJTTP-OECF), the Grant for Development of New Faculty Staff (at Chulalongkorn University) and Department of Physics, Faculty of Science, Chulalongkorn University.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2007/1
Y1 - 2007/1
N2 - We report on the investigation of the effects of rapid thermal annealing (RTA) on the optical and structural properties of InxGa1-xP1-yN y alloys (x=0.176 and 0≤y≤0.087) on GaP grown by metalorganic vapor phase epitaxy (MOVPE). Photoluminescence (PL) and PL excitation (PLE) spectroscopies were carried out to measure the energy positions of the near band edge excitonic emission. The high-resolution X-ray diffraction (HRXRD) measurements were carried out to examine the changes in the N concentration after RTA at 750 °C for 30 s. For y<0.074, the RTA treatment induces a large blue-shift of the PL peak energy and the absorption edge of PLE, which indicates some structural modification of these alloy films. On the other hand, for y≥0.074, both the PL and PLE spectral features remain qualitatively identical after RTA, suggesting the unchanged recombination mechanism. Furthermore, HRXRD results confirmed that the InxGa1-xP1-yN y closely lattice-matched films are thermally more stable against the N out diffusion.
AB - We report on the investigation of the effects of rapid thermal annealing (RTA) on the optical and structural properties of InxGa1-xP1-yN y alloys (x=0.176 and 0≤y≤0.087) on GaP grown by metalorganic vapor phase epitaxy (MOVPE). Photoluminescence (PL) and PL excitation (PLE) spectroscopies were carried out to measure the energy positions of the near band edge excitonic emission. The high-resolution X-ray diffraction (HRXRD) measurements were carried out to examine the changes in the N concentration after RTA at 750 °C for 30 s. For y<0.074, the RTA treatment induces a large blue-shift of the PL peak energy and the absorption edge of PLE, which indicates some structural modification of these alloy films. On the other hand, for y≥0.074, both the PL and PLE spectral features remain qualitatively identical after RTA, suggesting the unchanged recombination mechanism. Furthermore, HRXRD results confirmed that the InxGa1-xP1-yN y closely lattice-matched films are thermally more stable against the N out diffusion.
KW - A1. Photoluminescence (PL)
KW - A1. Photoluminescence excitation (PLE)
KW - A3. MOVPE
KW - B1. III-P-nitrides, Ees
KW - B2. InGaPN alloy
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U2 - 10.1016/j.jcrysgro.2006.10.110
DO - 10.1016/j.jcrysgro.2006.10.110
M3 - Article
AN - SCOPUS:33846517498
VL - 298
SP - 150
EP - 153
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - SPEC. ISS
ER -