Growth and post-growth rapid thermal annealing of InGaPN on GaP grown by metalorganic vapor phase epitaxy

Sakuntam Sanorpim, Fumihiro Nakajima, Nobuhiro Nakadan, Tokuharu Kimura, Ryuji Katayama, Kentaro Onabe

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report on the investigation of the effects of rapid thermal annealing (RTA) on the optical and structural properties of InxGa1-xP1-yN y alloys (x=0.176 and 0≤y≤0.087) on GaP grown by metalorganic vapor phase epitaxy (MOVPE). Photoluminescence (PL) and PL excitation (PLE) spectroscopies were carried out to measure the energy positions of the near band edge excitonic emission. The high-resolution X-ray diffraction (HRXRD) measurements were carried out to examine the changes in the N concentration after RTA at 750 °C for 30 s. For y<0.074, the RTA treatment induces a large blue-shift of the PL peak energy and the absorption edge of PLE, which indicates some structural modification of these alloy films. On the other hand, for y≥0.074, both the PL and PLE spectral features remain qualitatively identical after RTA, suggesting the unchanged recombination mechanism. Furthermore, HRXRD results confirmed that the InxGa1-xP1-yN y closely lattice-matched films are thermally more stable against the N out diffusion.

Original languageEnglish
Pages (from-to)150-153
Number of pages4
JournalJournal of Crystal Growth
Volume298
Issue numberSPEC. ISS
DOIs
Publication statusPublished - 2007 Jan 1

Keywords

  • A1. Photoluminescence (PL)
  • A1. Photoluminescence excitation (PLE)
  • A3. MOVPE
  • B1. III-P-nitrides, Ees
  • B2. InGaPN alloy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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