Growth and photoluminescence properties of self-organized CdSe quantum dots on a (111)A ZnSe surface

E. Kurtz, H. D. Jung, Takashi Hanada, Z. Zhu, T. Sekiguchi, T. Yao

Research output: Contribution to journalConference articlepeer-review

Abstract

Growth and properties of self-organized CdSe quantum dots (SQDs) grown by atomic layer epitaxy (ALE) on the atomically flat surface of (111)A ZnSe buffer layers have been investigated. We observe formation of dots at nominal layer thicknesses well below the critical thickness of the CdSe, a strong indication for coherent Stranski-Krastanow islanding. When the number of ALE cycles is increased the average dot size remains unchanged, instead the density is increased. Rather uniform base diameters (47±5 nm) are observed. The morphology of the buffer layers, dot structures and optical properties of the SQDs will be discussed.

Original languageEnglish
Pages (from-to)93-98
Number of pages6
JournalMolecular Crystals and Liquid Crystals Science and Technology Section B: Nonlinear Optics
Volume18
Issue number2-4
Publication statusPublished - 1997 Dec 1
EventProceedings of the 1997 International Symposium on Quantum Structures for Photonic Applications, QSPA'97 - Sendai, Jpn
Duration: 1997 Mar 61997 Mar 8

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

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