Abstract
Effect of Ga substitution in a (Ce,Lu)3Al5O12 scintillator was examined at the crystals grown by the micro-pulling down(μ-PD) method. Strong suppression of unwanted host luminescence due to an exciton localized around Lu-Al antisite defect was observed even at the Ga concentration of 10 mol%. Less-intense slower components in scintillation decay were obtained upon increasing the amount of Ga. While the radioluminescence intensities of the 5d-4f luminescence of Ce3+ were not strongly changed, light yield was increased by Ga substitution. The 20% Ga-substituted sample showed even higher light yield than typical Czochralski-grown Ga-free LuAG:Ce.
Original language | English |
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Pages (from-to) | 908-911 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 311 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2009 Jan 15 |
Keywords
- A1. Characterization
- A2. Growth from melt
- B1. Oxides
- B2. Scintillator materials
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry