Growth and optical properties of Lu3(Ga,Al)5O12 single crystals for scintillator application

Hiraku Ogino; Akira Yoshikawa; Martin Nikl; Jiri A. Mares; Jun ichi Shimoyama; Kohji Kishio

doi:10.1016/j.jcrysgro.2008.09.146

Growth and optical properties of Lu₃(Ga,Al)₅O₁₂ single crystals for scintillator application

Hiraku Ogino, Akira Yoshikawa, Martin Nikl, Jiri A. Mares, Jun ichi Shimoyama, Kohji Kishio

Materials Property Division

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

Effect of Ga substitution in a (Ce,Lu)₃Al₅O₁₂ scintillator was examined at the crystals grown by the micro-pulling down(μ-PD) method. Strong suppression of unwanted host luminescence due to an exciton localized around Lu-Al antisite defect was observed even at the Ga concentration of 10 mol%. Less-intense slower components in scintillation decay were obtained upon increasing the amount of Ga. While the radioluminescence intensities of the 5d-4f luminescence of Ce³⁺ were not strongly changed, light yield was increased by Ga substitution. The 20% Ga-substituted sample showed even higher light yield than typical Czochralski-grown Ga-free LuAG:Ce.

Original language	English
Pages (from-to)	908-911
Number of pages	4
Journal	Journal of Crystal Growth
Volume	311
Issue number	3
DOIs	https://doi.org/10.1016/j.jcrysgro.2008.09.146
Publication status	Published - 2009 Jan 15

Keywords

A1. Characterization
A2. Growth from melt
B1. Oxides
B2. Scintillator materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Access to Document

10.1016/j.jcrysgro.2008.09.146

Cite this

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title = "Growth and optical properties of Lu3(Ga,Al)5O12 single crystals for scintillator application",

abstract = "Effect of Ga substitution in a (Ce,Lu)3Al5O12 scintillator was examined at the crystals grown by the micro-pulling down(μ-PD) method. Strong suppression of unwanted host luminescence due to an exciton localized around Lu-Al antisite defect was observed even at the Ga concentration of 10 mol%. Less-intense slower components in scintillation decay were obtained upon increasing the amount of Ga. While the radioluminescence intensities of the 5d-4f luminescence of Ce3+ were not strongly changed, light yield was increased by Ga substitution. The 20% Ga-substituted sample showed even higher light yield than typical Czochralski-grown Ga-free LuAG:Ce.",

keywords = "A1. Characterization, A2. Growth from melt, B1. Oxides, B2. Scintillator materials",

author = "Hiraku Ogino and Akira Yoshikawa and Martin Nikl and Mares, {Jiri A.} and Shimoyama, {Jun ichi} and Kohji Kishio",

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T1 - Growth and optical properties of Lu3(Ga,Al)5O12 single crystals for scintillator application

AU - Ogino, Hiraku

AU - Yoshikawa, Akira

AU - Nikl, Martin

AU - Mares, Jiri A.

AU - Shimoyama, Jun ichi

AU - Kishio, Kohji

PY - 2009/1/15

Y1 - 2009/1/15

N2 - Effect of Ga substitution in a (Ce,Lu)3Al5O12 scintillator was examined at the crystals grown by the micro-pulling down(μ-PD) method. Strong suppression of unwanted host luminescence due to an exciton localized around Lu-Al antisite defect was observed even at the Ga concentration of 10 mol%. Less-intense slower components in scintillation decay were obtained upon increasing the amount of Ga. While the radioluminescence intensities of the 5d-4f luminescence of Ce3+ were not strongly changed, light yield was increased by Ga substitution. The 20% Ga-substituted sample showed even higher light yield than typical Czochralski-grown Ga-free LuAG:Ce.

AB - Effect of Ga substitution in a (Ce,Lu)3Al5O12 scintillator was examined at the crystals grown by the micro-pulling down(μ-PD) method. Strong suppression of unwanted host luminescence due to an exciton localized around Lu-Al antisite defect was observed even at the Ga concentration of 10 mol%. Less-intense slower components in scintillation decay were obtained upon increasing the amount of Ga. While the radioluminescence intensities of the 5d-4f luminescence of Ce3+ were not strongly changed, light yield was increased by Ga substitution. The 20% Ga-substituted sample showed even higher light yield than typical Czochralski-grown Ga-free LuAG:Ce.

KW - A1. Characterization

KW - A2. Growth from melt

KW - B1. Oxides

KW - B2. Scintillator materials

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