Growth and optical properties of Lu3(Ga,Al)5O12 single crystals for scintillator application

Hiraku Ogino, Akira Yoshikawa, Martin Nikl, Jiri A. Mares, Jun ichi Shimoyama, Kohji Kishio

Research output: Contribution to journalArticlepeer-review

55 Citations (Scopus)


Effect of Ga substitution in a (Ce,Lu)3Al5O12 scintillator was examined at the crystals grown by the micro-pulling down(μ-PD) method. Strong suppression of unwanted host luminescence due to an exciton localized around Lu-Al antisite defect was observed even at the Ga concentration of 10 mol%. Less-intense slower components in scintillation decay were obtained upon increasing the amount of Ga. While the radioluminescence intensities of the 5d-4f luminescence of Ce3+ were not strongly changed, light yield was increased by Ga substitution. The 20% Ga-substituted sample showed even higher light yield than typical Czochralski-grown Ga-free LuAG:Ce.

Original languageEnglish
Pages (from-to)908-911
Number of pages4
JournalJournal of Crystal Growth
Issue number3
Publication statusPublished - 2009 Jan 15


  • A1. Characterization
  • A2. Growth from melt
  • B1. Oxides
  • B2. Scintillator materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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