Growth and optical characterization of InAsN quantum dots

H. Tsurusawa; A. Nishikawa; R. Katayama; K. Onabe

doi:10.1002/pssb.200565395

Growth and optical characterization of InAsN quantum dots

H. Tsurusawa, A. Nishikawa, R. Katayama, K. Onabe

Materials Design Division

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Self-assembled InAsN quantum dots (QDs) have been grown by rf-plasma-assisted molecular beam epi-taxy (RF-MBE) on GaAs(001) substrates via a 2-monolayer (ML)-thick InAs wetting layer. The InAsN QDs are typically 30-70 nm in diameter and 3-7nm in height. The dot density was 3.6 × 10 ⁹-2.3 × 10¹⁰ cm^-2 for the fluxes corresponding to the nominal thicknesses of 3.0-4.0 MLs. As the nominal thickness increases, the dot density increases, while the diameter decreases. The low-temperature (10 K) photoluminescence (PL) of the QD samples shows emission spectra in the wavelength range of 1.2-1.6 μn apparently caused by the N incorporation (0.8-2.0%) into the QDs. The QD size distribution causes broad emission spectra.

Original language	English
Pages (from-to)	1657-1660
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	243
Issue number	7
DOIs	https://doi.org/10.1002/pssb.200565395
Publication status	Published - 2006 Jun

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1002/pssb.200565395

Cite this

@article{908a7b391f64401dbf853fe98c141c39,

title = "Growth and optical characterization of InAsN quantum dots",

abstract = "Self-assembled InAsN quantum dots (QDs) have been grown by rf-plasma-assisted molecular beam epi-taxy (RF-MBE) on GaAs(001) substrates via a 2-monolayer (ML)-thick InAs wetting layer. The InAsN QDs are typically 30-70 nm in diameter and 3-7nm in height. The dot density was 3.6 × 10 9-2.3 × 1010 cm-2 for the fluxes corresponding to the nominal thicknesses of 3.0-4.0 MLs. As the nominal thickness increases, the dot density increases, while the diameter decreases. The low-temperature (10 K) photoluminescence (PL) of the QD samples shows emission spectra in the wavelength range of 1.2-1.6 μn apparently caused by the N incorporation (0.8-2.0%) into the QDs. The QD size distribution causes broad emission spectra.",

author = "H. Tsurusawa and A. Nishikawa and R. Katayama and K. Onabe",

year = "2006",

month = jun,

doi = "10.1002/pssb.200565395",

language = "English",

volume = "243",

pages = "1657--1660",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "Wiley-VCH Verlag",

number = "7",

}

TY - JOUR

T1 - Growth and optical characterization of InAsN quantum dots

AU - Tsurusawa, H.

AU - Nishikawa, A.

AU - Katayama, R.

AU - Onabe, K.

PY - 2006/6

Y1 - 2006/6

N2 - Self-assembled InAsN quantum dots (QDs) have been grown by rf-plasma-assisted molecular beam epi-taxy (RF-MBE) on GaAs(001) substrates via a 2-monolayer (ML)-thick InAs wetting layer. The InAsN QDs are typically 30-70 nm in diameter and 3-7nm in height. The dot density was 3.6 × 10 9-2.3 × 1010 cm-2 for the fluxes corresponding to the nominal thicknesses of 3.0-4.0 MLs. As the nominal thickness increases, the dot density increases, while the diameter decreases. The low-temperature (10 K) photoluminescence (PL) of the QD samples shows emission spectra in the wavelength range of 1.2-1.6 μn apparently caused by the N incorporation (0.8-2.0%) into the QDs. The QD size distribution causes broad emission spectra.

AB - Self-assembled InAsN quantum dots (QDs) have been grown by rf-plasma-assisted molecular beam epi-taxy (RF-MBE) on GaAs(001) substrates via a 2-monolayer (ML)-thick InAs wetting layer. The InAsN QDs are typically 30-70 nm in diameter and 3-7nm in height. The dot density was 3.6 × 10 9-2.3 × 1010 cm-2 for the fluxes corresponding to the nominal thicknesses of 3.0-4.0 MLs. As the nominal thickness increases, the dot density increases, while the diameter decreases. The low-temperature (10 K) photoluminescence (PL) of the QD samples shows emission spectra in the wavelength range of 1.2-1.6 μn apparently caused by the N incorporation (0.8-2.0%) into the QDs. The QD size distribution causes broad emission spectra.

UR - http://www.scopus.com/inward/record.url?scp=33745738693&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745738693&partnerID=8YFLogxK

U2 - 10.1002/pssb.200565395

DO - 10.1002/pssb.200565395

M3 - Article

AN - SCOPUS:33745738693

VL - 243

SP - 1657

EP - 1660

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 7

ER -

Growth and optical characterization of InAsN quantum dots

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this