Growth and optical characterization of InAsN quantum dots

H. Tsurusawa, A. Nishikawa, R. Katayama, K. Onabe

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Self-assembled InAsN quantum dots (QDs) have been grown by rf-plasma-assisted molecular beam epi-taxy (RF-MBE) on GaAs(001) substrates via a 2-monolayer (ML)-thick InAs wetting layer. The InAsN QDs are typically 30-70 nm in diameter and 3-7nm in height. The dot density was 3.6 × 10 9-2.3 × 1010 cm-2 for the fluxes corresponding to the nominal thicknesses of 3.0-4.0 MLs. As the nominal thickness increases, the dot density increases, while the diameter decreases. The low-temperature (10 K) photoluminescence (PL) of the QD samples shows emission spectra in the wavelength range of 1.2-1.6 μn apparently caused by the N incorporation (0.8-2.0%) into the QDs. The QD size distribution causes broad emission spectra.

Original languageEnglish
Pages (from-to)1657-1660
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume243
Issue number7
DOIs
Publication statusPublished - 2006 Jun

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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