TY - JOUR
T1 - Growth and optical characterization of InAsN quantum dots
AU - Tsurusawa, H.
AU - Nishikawa, A.
AU - Katayama, R.
AU - Onabe, K.
N1 - Copyright:
Copyright 2006 Elsevier B.V., All rights reserved.
PY - 2006/6
Y1 - 2006/6
N2 - Self-assembled InAsN quantum dots (QDs) have been grown by rf-plasma-assisted molecular beam epi-taxy (RF-MBE) on GaAs(001) substrates via a 2-monolayer (ML)-thick InAs wetting layer. The InAsN QDs are typically 30-70 nm in diameter and 3-7nm in height. The dot density was 3.6 × 10 9-2.3 × 1010 cm-2 for the fluxes corresponding to the nominal thicknesses of 3.0-4.0 MLs. As the nominal thickness increases, the dot density increases, while the diameter decreases. The low-temperature (10 K) photoluminescence (PL) of the QD samples shows emission spectra in the wavelength range of 1.2-1.6 μn apparently caused by the N incorporation (0.8-2.0%) into the QDs. The QD size distribution causes broad emission spectra.
AB - Self-assembled InAsN quantum dots (QDs) have been grown by rf-plasma-assisted molecular beam epi-taxy (RF-MBE) on GaAs(001) substrates via a 2-monolayer (ML)-thick InAs wetting layer. The InAsN QDs are typically 30-70 nm in diameter and 3-7nm in height. The dot density was 3.6 × 10 9-2.3 × 1010 cm-2 for the fluxes corresponding to the nominal thicknesses of 3.0-4.0 MLs. As the nominal thickness increases, the dot density increases, while the diameter decreases. The low-temperature (10 K) photoluminescence (PL) of the QD samples shows emission spectra in the wavelength range of 1.2-1.6 μn apparently caused by the N incorporation (0.8-2.0%) into the QDs. The QD size distribution causes broad emission spectra.
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U2 - 10.1002/pssb.200565395
DO - 10.1002/pssb.200565395
M3 - Article
AN - SCOPUS:33745738693
VL - 243
SP - 1657
EP - 1660
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
SN - 0370-1972
IS - 7
ER -