Abstract
Self-assembled InAsN quantum dots (QDs) have been grown by rf-plasma-assisted molecular beam epi-taxy (RF-MBE) on GaAs(001) substrates via a 2-monolayer (ML)-thick InAs wetting layer. The InAsN QDs are typically 30-70 nm in diameter and 3-7nm in height. The dot density was 3.6 × 10 9-2.3 × 1010 cm-2 for the fluxes corresponding to the nominal thicknesses of 3.0-4.0 MLs. As the nominal thickness increases, the dot density increases, while the diameter decreases. The low-temperature (10 K) photoluminescence (PL) of the QD samples shows emission spectra in the wavelength range of 1.2-1.6 μn apparently caused by the N incorporation (0.8-2.0%) into the QDs. The QD size distribution causes broad emission spectra.
Original language | English |
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Pages (from-to) | 1657-1660 |
Number of pages | 4 |
Journal | Physica Status Solidi (B) Basic Research |
Volume | 243 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2006 Jun |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics