Growth and microstructure of epitaxial Ti3SiC2 contact layers on SiC

Susumu Tsukimoto, Kazuhiro Ito, Zhongchang Wang, Mitsuhiro Saito, Yuichi Ikuhara, Masanori Murakami

    Research output: Contribution to journalArticlepeer-review

    25 Citations (Scopus)


    Growth and microstructure of ternary Ti3SiC2 compound layers on 4H-SiC, which play am important role in formation of TiAl-based ohmic contacts to p-type SiC, were investigated in this study. The Ti 3SiC2 layer was fabricated by deposition of Ti/Al contacts (where a slash "/" indicates the deposition sequence) on the 4H-SiC(0001) substrate and subsequent rapid thermal anneal at 1000°C in ultra high vacuum. After annealing, reaction products and microstructure of the Ti3SiC2 layer were investigated by X ray diffraction analysis and transmission electron microscopy observations in order to understand the growth processes of the Ti3SiC2 layer and determination of the Ti3SiC2/4H-SiC interface structure. The Ti3SiC2 layers with hexagonal plate shape were observed to grow epitaxially on the SiC(0001) surface by anisotropic lateral growth process. The interface was found to have a hetero-epitaxial orientation relationship of (0001)tsc//(0001)s and [01̄10] TSc//[01̄10]s where TSC and S represent Ti 3SiC2 and 4H-SiC, respectively, and have well-defined ledge-terrace structures with low density of misfit dislocations due to an extremely low lattice mismatch of 0.4% between Ti3SiC2 and 4H-SiC.

    Original languageEnglish
    Pages (from-to)1071-1075
    Number of pages5
    JournalMaterials Transactions
    Issue number5
    Publication statusPublished - 2009 May


    • 4H-SiC
    • Interface
    • Lateral growth
    • TiAl
    • TiSiC

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering


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