Growth and mechanical properties of GeSi bulk crystals

I. Yonenaga

Research output: Contribution to journalArticlepeer-review

35 Citations (Scopus)

Abstract

The dislocation velocity and mechanical strength of the GeSi alloys were investigated by the etch pit technique and compressive deformation tests, respectively. In the GeSi alloys of the composition range 0.004<x<0.080 the dislocation velocity first increases and then decreases with decreasing Si content in the temperature range 450-700 °C and the stress range 3-24 MPa. In contrast, the composition range 0.94<x<1 the dislocation velocity first increases and then decreases with decreasing Si content in the temperature range 750-850 °C and the stress range 3-30 MPa. The velocity dislocations was determined as functions of stress and temperature. The yield stress of the GeSi alloys is dependent on the composition, being proportional to a x(1-x).

Original languageEnglish
Pages (from-to)329-333
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Volume10
Issue number5
DOIs
Publication statusPublished - 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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