Growth and interface phase stability of barium hexaferrite films on SiC(0001)

V. K. Lazarov; P. J. Hasnip; Z. Cai; K. Yoshida; K. S. Ziemer

doi:10.1063/1.3559496

Growth and interface phase stability of barium hexaferrite films on SiC(0001)

V. K. Lazarov, P. J. Hasnip, Z. Cai, K. Yoshida, K. S. Ziemer

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We have studied interface phase stability of the BaFe₁₂O ₁₉ (BaM) thin films grown by molecular beam epitaxy on SiC(0001). The films were epitaxially grown with the following crystallographic relation: BaM(0001)∥SiC(0001) and BaM(11-20)∥SiC(11-20). High resolution TEM reveals the existence of two interfacial bands with different structure than BaM. The first band close to SiC is SiO_x while the second has spinel structure and chemically corresponds to Fe₃O₄. These findings suggest that at initial growth stages Fe₃O₄ is more favorable than BaM. Density functional theory modeling of the phase stability of BaM compared to Fe₃O₄ shows that BaM is only stable at high oxygen partial pressures.

Original language	English
Article number	07E520
Journal	Journal of Applied Physics
Volume	109
Issue number	7
DOIs	https://doi.org/10.1063/1.3559496
Publication status	Published - 2011 Apr 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Growth and interface phase stability of barium hexaferrite films on SiC(0001)",

abstract = "We have studied interface phase stability of the BaFe12O 19 (BaM) thin films grown by molecular beam epitaxy on SiC(0001). The films were epitaxially grown with the following crystallographic relation: BaM(0001)∥SiC(0001) and BaM(11-20)∥SiC(11-20). High resolution TEM reveals the existence of two interfacial bands with different structure than BaM. The first band close to SiC is SiOx while the second has spinel structure and chemically corresponds to Fe3O4. These findings suggest that at initial growth stages Fe3O4 is more favorable than BaM. Density functional theory modeling of the phase stability of BaM compared to Fe3O4 shows that BaM is only stable at high oxygen partial pressures.",

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T1 - Growth and interface phase stability of barium hexaferrite films on SiC(0001)

AU - Lazarov, V. K.

AU - Hasnip, P. J.

AU - Cai, Z.

AU - Yoshida, K.

AU - Ziemer, K. S.

PY - 2011/4/1

Y1 - 2011/4/1

N2 - We have studied interface phase stability of the BaFe12O 19 (BaM) thin films grown by molecular beam epitaxy on SiC(0001). The films were epitaxially grown with the following crystallographic relation: BaM(0001)∥SiC(0001) and BaM(11-20)∥SiC(11-20). High resolution TEM reveals the existence of two interfacial bands with different structure than BaM. The first band close to SiC is SiOx while the second has spinel structure and chemically corresponds to Fe3O4. These findings suggest that at initial growth stages Fe3O4 is more favorable than BaM. Density functional theory modeling of the phase stability of BaM compared to Fe3O4 shows that BaM is only stable at high oxygen partial pressures.

AB - We have studied interface phase stability of the BaFe12O 19 (BaM) thin films grown by molecular beam epitaxy on SiC(0001). The films were epitaxially grown with the following crystallographic relation: BaM(0001)∥SiC(0001) and BaM(11-20)∥SiC(11-20). High resolution TEM reveals the existence of two interfacial bands with different structure than BaM. The first band close to SiC is SiOx while the second has spinel structure and chemically corresponds to Fe3O4. These findings suggest that at initial growth stages Fe3O4 is more favorable than BaM. Density functional theory modeling of the phase stability of BaM compared to Fe3O4 shows that BaM is only stable at high oxygen partial pressures.

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Growth and interface phase stability of barium hexaferrite films on SiC(0001)

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