Growth and fundamental properties of GeSi bulk crystals

I. Yonenaga

Research output: Contribution to conferencePaperpeer-review

Abstract

The Czochralski growth of GeSi bulk crystals of large size in the whole composition range 0<x<1 was attempted. Full single crystals of GeSi alloys of large size within the composition ranges of 0<x<0.15 and 0.85<x<1 were successfully grown.

Original languageEnglish
Pages87-92
Number of pages6
Publication statusPublished - 2002 Dec 1
Event2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002) - , Slovakia
Duration: 2002 Jun 302002 Jul 5

Other

Other2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002)
CountrySlovakia
Period02/6/3002/7/5

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Growth and fundamental properties of GeSi bulk crystals'. Together they form a unique fingerprint.

Cite this