Abstract
The Czochralski growth of GeSi bulk crystals of large size in the whole composition range 0<x<1 was attempted. Full single crystals of GeSi alloys of large size within the composition ranges of 0<x<0.15 and 0.85<x<1 were successfully grown.
| Original language | English |
|---|---|
| Pages | 87-92 |
| Number of pages | 6 |
| Publication status | Published - 2002 Dec 1 |
| Event | 2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002) - , Slovakia Duration: 2002 Jun 30 → 2002 Jul 5 |
Other
| Other | 2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002) |
|---|---|
| Country/Territory | Slovakia |
| Period | 02/6/30 → 02/7/5 |
ASJC Scopus subject areas
- Engineering(all)