Abstract
The Czochralski growth of GeSi bulk crystals of large size in the whole composition range 0<x<1 was attempted. Full single crystals of GeSi alloys of large size within the composition ranges of 0<x<0.15 and 0.85<x<1 were successfully grown.
Original language | English |
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Pages | 87-92 |
Number of pages | 6 |
Publication status | Published - 2002 Dec 1 |
Event | 2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002) - , Slovakia Duration: 2002 Jun 30 → 2002 Jul 5 |
Other
Other | 2002 12th International Conference on Semiconducting and Insulating Materials (SIMC-XII-2002) |
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Country | Slovakia |
Period | 02/6/30 → 02/7/5 |
ASJC Scopus subject areas
- Engineering(all)