Growth and Electron Trap Characterization of GaAs by Molecular Beam Epitaxy

Tamotsu Hashizume; Ryuichi Katsumi; Hideo Ohno; Hideki Hasegawa

doi:10.3131/jvsj.28.587

Growth and Electron Trap Characterization of GaAs by Molecular Beam Epitaxy

Tamotsu Hashizume, Ryuichi Katsumi, Hideo Ohno, Hideki Hasegawa

Leadership

Research output: Contribution to journal › Article › peer-review

Abstract

Crowth of GaAs by molecular beam epitaxy and electrical characterization of grown layers are described. Six kinds of electron traps with thermal activation energies ranging from 0.08 to 0.55 eV were detected in undoped GaAs by DLTS. The concentration of these traps, which is in the range of 2.0×10¹⁴–3.3×10¹⁵ cm⁻³, is reduced by a factor 10–50 by Pb flux incident on the crystal surface during growth. The reduction of trap concentration seems to be due to the modification of the surface processes during MBE growth.

Original language	English
Pages (from-to)	587-595
Number of pages	9
Journal	Shinku/Journal of the Vacuum Society of Japan
Volume	28
Issue number	7
DOIs	https://doi.org/10.3131/jvsj.28.587
Publication status	Published - 1985

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.3131/jvsj.28.587

Fingerprint Dive into the research topics of 'Growth and Electron Trap Characterization of GaAs by Molecular Beam Epitaxy'. Together they form a unique fingerprint.

Cite this

@article{8052fdda2a6f45a8b9264fe6e5957076,

title = "Growth and Electron Trap Characterization of GaAs by Molecular Beam Epitaxy",

abstract = "Crowth of GaAs by molecular beam epitaxy and electrical characterization of grown layers are described. Six kinds of electron traps with thermal activation energies ranging from 0.08 to 0.55 eV were detected in undoped GaAs by DLTS. The concentration of these traps, which is in the range of 2.0×1014–3.3×1015 cm−3, is reduced by a factor 10–50 by Pb flux incident on the crystal surface during growth. The reduction of trap concentration seems to be due to the modification of the surface processes during MBE growth.",

author = "Tamotsu Hashizume and Ryuichi Katsumi and Hideo Ohno and Hideki Hasegawa",

year = "1985",

doi = "10.3131/jvsj.28.587",

language = "English",

volume = "28",

pages = "587--595",

journal = "Shinku/Journal of the Vacuum Society of Japan",

issn = "0559-8516",

number = "7",

}

TY - JOUR

T1 - Growth and Electron Trap Characterization of GaAs by Molecular Beam Epitaxy

AU - Hashizume, Tamotsu

AU - Katsumi, Ryuichi

AU - Ohno, Hideo

AU - Hasegawa, Hideki

PY - 1985

Y1 - 1985

N2 - Crowth of GaAs by molecular beam epitaxy and electrical characterization of grown layers are described. Six kinds of electron traps with thermal activation energies ranging from 0.08 to 0.55 eV were detected in undoped GaAs by DLTS. The concentration of these traps, which is in the range of 2.0×1014–3.3×1015 cm−3, is reduced by a factor 10–50 by Pb flux incident on the crystal surface during growth. The reduction of trap concentration seems to be due to the modification of the surface processes during MBE growth.

AB - Crowth of GaAs by molecular beam epitaxy and electrical characterization of grown layers are described. Six kinds of electron traps with thermal activation energies ranging from 0.08 to 0.55 eV were detected in undoped GaAs by DLTS. The concentration of these traps, which is in the range of 2.0×1014–3.3×1015 cm−3, is reduced by a factor 10–50 by Pb flux incident on the crystal surface during growth. The reduction of trap concentration seems to be due to the modification of the surface processes during MBE growth.

UR - http://www.scopus.com/inward/record.url?scp=0022282220&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022282220&partnerID=8YFLogxK

U2 - 10.3131/jvsj.28.587

DO - 10.3131/jvsj.28.587

M3 - Article

AN - SCOPUS:0022282220

VL - 28

SP - 587

EP - 595

JO - Shinku/Journal of the Vacuum Society of Japan

JF - Shinku/Journal of the Vacuum Society of Japan

SN - 0559-8516

IS - 7

ER -