Growth and Electron Trap Characterization of GaAs by Molecular Beam Epitaxy

Tamotsu Hashizume, Ryuichi Katsumi, Hideo Ohno, Hideki Hasegawa

Research output: Contribution to journalArticlepeer-review

Abstract

Crowth of GaAs by molecular beam epitaxy and electrical characterization of grown layers are described. Six kinds of electron traps with thermal activation energies ranging from 0.08 to 0.55 eV were detected in undoped GaAs by DLTS. The concentration of these traps, which is in the range of 2.0×1014–3.3×1015 cm−3, is reduced by a factor 10–50 by Pb flux incident on the crystal surface during growth. The reduction of trap concentration seems to be due to the modification of the surface processes during MBE growth.

Original languageEnglish
Pages (from-to)587-595
Number of pages9
JournalShinku/Journal of the Vacuum Society of Japan
Volume28
Issue number7
DOIs
Publication statusPublished - 1985

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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