Growth and Electron Trap Characterization of GaAs by Molecular Beam Epitaxy

Tamotsu Hashizume; Ryuichi Katsumi; Hideo Ohno; Hideki Hasegawa

doi:10.3131/jvsj.28.587

Growth and Electron Trap Characterization of GaAs by Molecular Beam Epitaxy

Tamotsu Hashizume, Ryuichi Katsumi, Hideo Ohno, Hideki Hasegawa

Research output: Contribution to journal › Article › peer-review

Abstract

Crowth of GaAs by molecular beam epitaxy and electrical characterization of grown layers are described. Six kinds of electron traps with thermal activation energies ranging from 0.08 to 0.55 eV were detected in undoped GaAs by DLTS. The concentration of these traps, which is in the range of 2.0×10¹⁴–3.3×10¹⁵ cm⁻³, is reduced by a factor 10–50 by Pb flux incident on the crystal surface during growth. The reduction of trap concentration seems to be due to the modification of the surface processes during MBE growth.

Original language	English
Pages (from-to)	587-595
Number of pages	9
Journal	Shinku/Journal of the Vacuum Society of Japan
Volume	28
Issue number	7
DOIs	https://doi.org/10.3131/jvsj.28.587
Publication status	Published - 1985
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.3131/jvsj.28.587

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title = "Growth and Electron Trap Characterization of GaAs by Molecular Beam Epitaxy",

abstract = "Crowth of GaAs by molecular beam epitaxy and electrical characterization of grown layers are described. Six kinds of electron traps with thermal activation energies ranging from 0.08 to 0.55 eV were detected in undoped GaAs by DLTS. The concentration of these traps, which is in the range of 2.0×1014–3.3×1015 cm−3, is reduced by a factor 10–50 by Pb flux incident on the crystal surface during growth. The reduction of trap concentration seems to be due to the modification of the surface processes during MBE growth.",

author = "Tamotsu Hashizume and Ryuichi Katsumi and Hideo Ohno and Hideki Hasegawa",

year = "1985",

doi = "10.3131/jvsj.28.587",

language = "English",

volume = "28",

pages = "587--595",

journal = "Shinku/Journal of the Vacuum Society of Japan",

issn = "0559-8516",

number = "7",

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T1 - Growth and Electron Trap Characterization of GaAs by Molecular Beam Epitaxy

AU - Hashizume, Tamotsu

AU - Katsumi, Ryuichi

AU - Ohno, Hideo

AU - Hasegawa, Hideki

PY - 1985

Y1 - 1985

N2 - Crowth of GaAs by molecular beam epitaxy and electrical characterization of grown layers are described. Six kinds of electron traps with thermal activation energies ranging from 0.08 to 0.55 eV were detected in undoped GaAs by DLTS. The concentration of these traps, which is in the range of 2.0×1014–3.3×1015 cm−3, is reduced by a factor 10–50 by Pb flux incident on the crystal surface during growth. The reduction of trap concentration seems to be due to the modification of the surface processes during MBE growth.

AB - Crowth of GaAs by molecular beam epitaxy and electrical characterization of grown layers are described. Six kinds of electron traps with thermal activation energies ranging from 0.08 to 0.55 eV were detected in undoped GaAs by DLTS. The concentration of these traps, which is in the range of 2.0×1014–3.3×1015 cm−3, is reduced by a factor 10–50 by Pb flux incident on the crystal surface during growth. The reduction of trap concentration seems to be due to the modification of the surface processes during MBE growth.

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DO - 10.3131/jvsj.28.587

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JO - Shinku/Journal of the Vacuum Society of Japan

JF - Shinku/Journal of the Vacuum Society of Japan

SN - 0559-8516

IS - 7

ER -

Growth and Electron Trap Characterization of GaAs by Molecular Beam Epitaxy

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