Growth and electrical properties of N, N′ -bis(n -pentyl)terrylene- 3,4:11,12-tetracarboximide thin films

Matthieu Petit, Ryoma Hayakawa, Yasuhiro Shirai, Yutaka Wakayama, Jonathan P. Hill, Katsuhiko Ariga, Toyohiro Chikyow

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16 Citations (Scopus)


A n -type semiconductor molecule N, N′ -bis(n -pentyl)terrylene-3,4: 11,12-tetracarboximide (TTCDI-5C) was synthesized. Theoretical calculations predict several advantages in electrical properties, including large adiabatic electron affinity and small reorganization energy. The molecule was deposited on Si O2 surfaces and the structure of the resultant thin film was studied. Grain size and thin film crystallinity improve as the temperature increases. Top-contact organic field effect transistors (OFETs) using TTCDI-5C as the semiconductor layer were fabricated using Si O2 as the gate dielectric. Values of charge carrier mobility up to 7.24× 10-2 cm2 V-1 s-1 and current on/off ratios higher than 104 were obtained, demonstrating the potential of TTCD-5C for use in OFETs.

Original languageEnglish
Article number163301
JournalApplied Physics Letters
Issue number16
Publication statusPublished - 2008
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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