TY - JOUR
T1 - Growth and electrical properties of Fe doped (Ba, Sr)TiO3 thin films deposited by pulsed laser deposition
AU - Yonezawa, Yoshiyuki
AU - Kato, Megumi
AU - Konishi, Yoshinori
AU - Yoshida, Shizuyasu
AU - Okuda, Nobuhiro
AU - Maeda, Takahiko
AU - Tanuma, Ryohei
AU - Ohsawa, Michio
AU - Matsuyama, Hideaki
AU - Ogino, Shinji
AU - Fujishima, Naoto
AU - Matsuda, Akinori
AU - Furusyo, Noboru
AU - Chikyow, Toyohiro
AU - Kawasaki, Masashi
AU - Koinuma, Hideomi
PY - 2002
Y1 - 2002
N2 - Impurity effects were investigated in (Ba, Sr)TiO3 (BST) systems in order to suppress leakage currents under relatively low oxygen pressure conditions by Pulsed Laser Deposition (PLD). We tried to dope transition metals, such as Mo, Mn, Cr, W and Fe into the BST target and used the targets to fabricate the films. By measuring electrical properties, we found Fe-doping had a significant effect on suppressing leakage current. Subsequently, we changed the amount of Fe doping from 0.1 mol% to 6%. As a result, with post annealing, the sample with Fe:4% showed the lowest leakage current among those analyzed. Even without post annealing, the sample with Fe:6% showed the lowest leakage current. As for the dielectric constants, they decreased as the doping increased. At most, a 30% reduction was observed, compared with non-doped BST. XANES (X-ray Absorption Near Edge Structures) results indicated that the valency of the Fe ion was 3+ and located at the B-site of BST.
AB - Impurity effects were investigated in (Ba, Sr)TiO3 (BST) systems in order to suppress leakage currents under relatively low oxygen pressure conditions by Pulsed Laser Deposition (PLD). We tried to dope transition metals, such as Mo, Mn, Cr, W and Fe into the BST target and used the targets to fabricate the films. By measuring electrical properties, we found Fe-doping had a significant effect on suppressing leakage current. Subsequently, we changed the amount of Fe doping from 0.1 mol% to 6%. As a result, with post annealing, the sample with Fe:4% showed the lowest leakage current among those analyzed. Even without post annealing, the sample with Fe:6% showed the lowest leakage current. As for the dielectric constants, they decreased as the doping increased. At most, a 30% reduction was observed, compared with non-doped BST. XANES (X-ray Absorption Near Edge Structures) results indicated that the valency of the Fe ion was 3+ and located at the B-site of BST.
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M3 - Article
AN - SCOPUS:0036352217
VL - 688
SP - 309
EP - 314
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
ER -