Growth and electrical properties of Fe doped (Ba, Sr)TiO3 thin films deposited by pulsed laser deposition

Yoshiyuki Yonezawa, Megumi Kato, Yoshinori Konishi, Shizuyasu Yoshida, Nobuhiro Okuda, Takahiko Maeda, Ryohei Tanuma, Michio Ohsawa, Hideaki Matsuyama, Shinji Ogino, Naoto Fujishima, Akinori Matsuda, Noboru Furusyo, Toyohiro Chikyow, Masashi Kawasaki, Hideomi Koinuma

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Impurity effects were investigated in (Ba, Sr)TiO3 (BST) systems in order to suppress leakage currents under relatively low oxygen pressure conditions by Pulsed Laser Deposition (PLD). We tried to dope transition metals, such as Mo, Mn, Cr, W and Fe into the BST target and used the targets to fabricate the films. By measuring electrical properties, we found Fe-doping had a significant effect on suppressing leakage current. Subsequently, we changed the amount of Fe doping from 0.1 mol% to 6%. As a result, with post annealing, the sample with Fe:4% showed the lowest leakage current among those analyzed. Even without post annealing, the sample with Fe:6% showed the lowest leakage current. As for the dielectric constants, they decreased as the doping increased. At most, a 30% reduction was observed, compared with non-doped BST. XANES (X-ray Absorption Near Edge Structures) results indicated that the valency of the Fe ion was 3+ and located at the B-site of BST.

Original languageEnglish
Pages (from-to)309-314
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume688
Publication statusPublished - 2002 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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