Growth and effects of remote-plasma oxidation on thin films of HfO2 prepared by metal-organic chemical-vapor deposition

Kazuhiko Yamamoto; Masayuki Asai; Sadayoshi Horii; Hironobu Miya; Masaaki Niwa

doi:10.1116/1.1584039

Growth and effects of remote-plasma oxidation on thin films of HfO₂ prepared by metal-organic chemical-vapor deposition

Kazuhiko Yamamoto, Masayuki Asai, Sadayoshi Horii, Hironobu Miya, Masaaki Niwa

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

HfO₂ films were fabricated by MOCVD from Hf(OC(CH₃)₂CH₂OCH₃)₄. The addition of oxygen to the Hf precursor during deposition leads to oxidation of Hf(MMP)₄ and the release of H₂O, and organic byproducts. These impurities lead to degradation of the electrical properties for the HfO₂ film. In situ remote-plasma oxidation effectively reduced the presence of impurities in the HfO₂ and achieves the successful deposition of HfO₂ films that have lower values for leakage current.

Original language	English
Pages (from-to)	1033-1037
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	21
Issue number	4
DOIs	https://doi.org/10.1116/1.1584039
Publication status	Published - 2003 Jul
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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Growth and effects of remote-plasma oxidation on thin films of HfO₂ prepared by metal-organic chemical-vapor deposition. / Yamamoto, Kazuhiko; Asai, Masayuki; Horii, Sadayoshi; Miya, Hironobu; Niwa, Masaaki.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 21, No. 4, 07.2003, p. 1033-1037.

Research output: Contribution to journal › Article › peer-review

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abstract = "HfO2 films were fabricated by MOCVD from Hf(OC(CH3)2CH2OCH3)4. The addition of oxygen to the Hf precursor during deposition leads to oxidation of Hf(MMP)4 and the release of H2O, and organic byproducts. These impurities lead to degradation of the electrical properties for the HfO2 film. In situ remote-plasma oxidation effectively reduced the presence of impurities in the HfO2 and achieves the successful deposition of HfO2 films that have lower values for leakage current.",

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