Growth and effects of remote-plasma oxidation on thin films of HfO2 prepared by metal-organic chemical-vapor deposition

Kazuhiko Yamamoto, Masayuki Asai, Sadayoshi Horii, Hironobu Miya, Masaaki Niwa

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


HfO2 films were fabricated by MOCVD from Hf(OC(CH3)2CH2OCH3)4. The addition of oxygen to the Hf precursor during deposition leads to oxidation of Hf(MMP)4 and the release of H2O, and organic byproducts. These impurities lead to degradation of the electrical properties for the HfO2 film. In situ remote-plasma oxidation effectively reduced the presence of impurities in the HfO2 and achieves the successful deposition of HfO2 films that have lower values for leakage current.

Original languageEnglish
Pages (from-to)1033-1037
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Issue number4
Publication statusPublished - 2003 Jul
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Growth and effects of remote-plasma oxidation on thin films of HfO<sub>2</sub> prepared by metal-organic chemical-vapor deposition'. Together they form a unique fingerprint.

Cite this