Abstract
Bulk crystals of Ge1-xSix alloys in the whole composition range 0<x<1 were grown by the Czochralski technique. Full single crystals were obtained for the alloy composition 0<x<0.15 and 0.9<x<1. The dislocation velocity decreases with increasing Si content in the range 0<x<0.08, while the dislocation velocity first increases and then decreases with increasing Ge content in the range 0.94<x<1. The dislocation velocities were determined as functions of stress and temperature. The stress-strain behavior of the alloys becomes temperature-insensitive at high temperatures. The yield strength of the alloys depends on the composition, proportional to x(1-x) over the whole composition range. Built-in stress fields related to local fluctuation of the alloy composition and the dynamic development of a solute atmosphere around dislocations, seem to suppress the activities of dislocation and bring about alloy strengthening.
Original language | English |
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Pages (from-to) | 612-615 |
Number of pages | 4 |
Journal | Physica B: Condensed Matter |
Volume | 273-274 |
DOIs | |
Publication status | Published - 1999 Dec 15 |
Event | Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA Duration: 1999 Jul 26 → 1999 Jul 30 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering