Growth and dislocation behavior in GeSi bulk alloys

Ichiro Yonenaga

Research output: Contribution to journalConference articlepeer-review

14 Citations (Scopus)

Abstract

Bulk crystals of Ge1-xSix alloys in the whole composition range 0<x<1 were grown by the Czochralski technique. Full single crystals were obtained for the alloy composition 0<x<0.15 and 0.9<x<1. The dislocation velocity decreases with increasing Si content in the range 0<x<0.08, while the dislocation velocity first increases and then decreases with increasing Ge content in the range 0.94<x<1. The dislocation velocities were determined as functions of stress and temperature. The stress-strain behavior of the alloys becomes temperature-insensitive at high temperatures. The yield strength of the alloys depends on the composition, proportional to x(1-x) over the whole composition range. Built-in stress fields related to local fluctuation of the alloy composition and the dynamic development of a solute atmosphere around dislocations, seem to suppress the activities of dislocation and bring about alloy strengthening.

Original languageEnglish
Pages (from-to)612-615
Number of pages4
JournalPhysica B: Condensed Matter
Volume273-274
DOIs
Publication statusPublished - 1999 Dec 15
EventProceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA
Duration: 1999 Jul 261999 Jul 30

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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