Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on (101̄1̄) GaN templates

Arpan Chakraborty, T. Onuma, T. J. Baker, S. Keller, S. F. Chichibu, S. P. DenBaars, S. Nakamura, J. S. Speck, U. K. Mishra

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

InGaN/GaN MQW samples were grown by metal organic chemical vapor deposition (MOCVD) on (101̄1̄) oriented GaN templates. Effects of growth temperature and reactor pressure on the photoluminescence (PL) properties were investigated. The emission intensity improved significantly when the QWs were grown at 100 Torr, compared to higher pressure growths. The effect of well-width on the luminescence properties was investigated and an optimum well width of 40 A was determined. Excitation dependent PL measurements revealed no shift in the PL emission wavelength suggesting the absence of electric field in the quantum wells. Furthermore, LEDs fabricated on (101̄1̄) GaN templates, emitting at 439 nm, showed no shift in the EL emission wavelength with the increase in drive current, reconfirming the absence of polarization.

Original languageEnglish
Title of host publicationProgress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications
Pages231-236
Number of pages6
Publication statusPublished - 2006 Aug 23
Externally publishedYes
Event2005 MRS Fall Meeting - Boston, MA, United States
Duration: 2005 Nov 282005 Dec 2

Publication series

NameMaterials Research Society Symposium Proceedings
Volume891
ISSN (Print)0272-9172

Other

Other2005 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA
Period05/11/2805/12/2

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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