Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on (1011̄1̄) GaN templates

Arpan Chakraborty; T. Onuma; T. J. Baker; S. Keller; S. F. Chichibu; S. P. Denbaars; S. Nakamura; J. S. Speck; U. K. Mishra

Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on (1011̄1̄) GaN templates

Arpan Chakraborty, T. Onuma, T. J. Baker, S. Keller, S. F. Chichibu, S. P. Denbaars, S. Nakamura, J. S. Speck, U. K. Mishra

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

InGaN/GaN MQW samples were grown by metal organic chemical vapor deposition (MOCVD) on (101̄1̄) oriented GaN templates. Effects of growth temperature and reactor pressure on the photoluminescence (PL) properties were investigated. The emission intensity improved significantly when the QWs were grown at 100 Torr, compared to higher pressure growths. The effect of well-width on the luminescence properties was investigated and an optimum well width of 40 Å was determined. Excitation dependent PL measurements revealed no shift in the PL emission wavelength suggesting the absence of electric field in the quantum wells. Furthermore, LEDs fabricated on (101̄1̄) GaN templates, emitting at 439 run, showed no shift in the EL emission wavelength with the increase in drive current, reconfirming the absence of polarization.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Pages	143-148
Number of pages	6
Publication status	Published - 2006 May 15
Externally published	Yes
Event	2005 Materials Research Society Fall Meeting - Boston, MA, United States Duration: 2005 Nov 28 → 2005 Dec 1

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	892
ISSN (Print)	0272-9172

Other

Other	2005 Materials Research Society Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	05/11/28 → 05/12/1

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Chakraborty, A., Onuma, T., Baker, T. J., Keller, S., Chichibu, S. F., Denbaars, S. P., Nakamura, S., Speck, J. S., & Mishra, U. K. (2006). Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on (1011̄1̄) GaN templates. In Materials Research Society Symposium Proceedings (pp. 143-148). (Materials Research Society Symposium Proceedings; Vol. 892).

Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on (1011̄1̄) GaN templates. / Chakraborty, Arpan; Onuma, T.; Baker, T. J. et al.

Materials Research Society Symposium Proceedings. 2006. p. 143-148 (Materials Research Society Symposium Proceedings; Vol. 892).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chakraborty, A, Onuma, T, Baker, TJ, Keller, S, Chichibu, SF, Denbaars, SP, Nakamura, S, Speck, JS & Mishra, UK 2006, Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on (1011̄1̄) GaN templates. in Materials Research Society Symposium Proceedings. Materials Research Society Symposium Proceedings, vol. 892, pp. 143-148, 2005 Materials Research Society Fall Meeting, Boston, MA, United States, 05/11/28.

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title = "Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on (101{\=1}{\=1}) GaN templates",

abstract = "InGaN/GaN MQW samples were grown by metal organic chemical vapor deposition (MOCVD) on (10{\=1}{\=1}) oriented GaN templates. Effects of growth temperature and reactor pressure on the photoluminescence (PL) properties were investigated. The emission intensity improved significantly when the QWs were grown at 100 Torr, compared to higher pressure growths. The effect of well-width on the luminescence properties was investigated and an optimum well width of 40 {\AA} was determined. Excitation dependent PL measurements revealed no shift in the PL emission wavelength suggesting the absence of electric field in the quantum wells. Furthermore, LEDs fabricated on (10{\=1}{\=1}) GaN templates, emitting at 439 run, showed no shift in the EL emission wavelength with the increase in drive current, reconfirming the absence of polarization.",

author = "Arpan Chakraborty and T. Onuma and Baker, {T. J.} and S. Keller and Chichibu, {S. F.} and Denbaars, {S. P.} and S. Nakamura and Speck, {J. S.} and Mishra, {U. K.}",

year = "2006",

month = may,

day = "15",

language = "English",

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series = "Materials Research Society Symposium Proceedings",

pages = "143--148",

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note = "2005 Materials Research Society Fall Meeting ; Conference date: 28-11-2005 Through 01-12-2005",

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T1 - Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on (1011̄1̄) GaN templates

AU - Chakraborty, Arpan

AU - Onuma, T.

AU - Baker, T. J.

AU - Keller, S.

AU - Chichibu, S. F.

AU - Denbaars, S. P.

AU - Nakamura, S.

AU - Speck, J. S.

AU - Mishra, U. K.

PY - 2006/5/15

Y1 - 2006/5/15

N2 - InGaN/GaN MQW samples were grown by metal organic chemical vapor deposition (MOCVD) on (101̄1̄) oriented GaN templates. Effects of growth temperature and reactor pressure on the photoluminescence (PL) properties were investigated. The emission intensity improved significantly when the QWs were grown at 100 Torr, compared to higher pressure growths. The effect of well-width on the luminescence properties was investigated and an optimum well width of 40 Å was determined. Excitation dependent PL measurements revealed no shift in the PL emission wavelength suggesting the absence of electric field in the quantum wells. Furthermore, LEDs fabricated on (101̄1̄) GaN templates, emitting at 439 run, showed no shift in the EL emission wavelength with the increase in drive current, reconfirming the absence of polarization.

AB - InGaN/GaN MQW samples were grown by metal organic chemical vapor deposition (MOCVD) on (101̄1̄) oriented GaN templates. Effects of growth temperature and reactor pressure on the photoluminescence (PL) properties were investigated. The emission intensity improved significantly when the QWs were grown at 100 Torr, compared to higher pressure growths. The effect of well-width on the luminescence properties was investigated and an optimum well width of 40 Å was determined. Excitation dependent PL measurements revealed no shift in the PL emission wavelength suggesting the absence of electric field in the quantum wells. Furthermore, LEDs fabricated on (101̄1̄) GaN templates, emitting at 439 run, showed no shift in the EL emission wavelength with the increase in drive current, reconfirming the absence of polarization.

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M3 - Conference contribution

AN - SCOPUS:33646386682

SN - 1558998462

SN - 9781558998469

T3 - Materials Research Society Symposium Proceedings

SP - 143

EP - 148

BT - Materials Research Society Symposium Proceedings

T2 - 2005 Materials Research Society Fall Meeting

Y2 - 28 November 2005 through 1 December 2005

ER -

Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on (1011̄1̄) GaN templates

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