TY - GEN
T1 - Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on (1011̄1̄) GaN templates
AU - Chakraborty, Arpan
AU - Onuma, T.
AU - Baker, T. J.
AU - Keller, S.
AU - Chichibu, S. F.
AU - Denbaars, S. P.
AU - Nakamura, S.
AU - Speck, J. S.
AU - Mishra, U. K.
PY - 2006/5/15
Y1 - 2006/5/15
N2 - InGaN/GaN MQW samples were grown by metal organic chemical vapor deposition (MOCVD) on (101̄1̄) oriented GaN templates. Effects of growth temperature and reactor pressure on the photoluminescence (PL) properties were investigated. The emission intensity improved significantly when the QWs were grown at 100 Torr, compared to higher pressure growths. The effect of well-width on the luminescence properties was investigated and an optimum well width of 40 Å was determined. Excitation dependent PL measurements revealed no shift in the PL emission wavelength suggesting the absence of electric field in the quantum wells. Furthermore, LEDs fabricated on (101̄1̄) GaN templates, emitting at 439 run, showed no shift in the EL emission wavelength with the increase in drive current, reconfirming the absence of polarization.
AB - InGaN/GaN MQW samples were grown by metal organic chemical vapor deposition (MOCVD) on (101̄1̄) oriented GaN templates. Effects of growth temperature and reactor pressure on the photoluminescence (PL) properties were investigated. The emission intensity improved significantly when the QWs were grown at 100 Torr, compared to higher pressure growths. The effect of well-width on the luminescence properties was investigated and an optimum well width of 40 Å was determined. Excitation dependent PL measurements revealed no shift in the PL emission wavelength suggesting the absence of electric field in the quantum wells. Furthermore, LEDs fabricated on (101̄1̄) GaN templates, emitting at 439 run, showed no shift in the EL emission wavelength with the increase in drive current, reconfirming the absence of polarization.
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M3 - Conference contribution
AN - SCOPUS:33646386682
SN - 1558998462
SN - 9781558998469
T3 - Materials Research Society Symposium Proceedings
SP - 143
EP - 148
BT - Materials Research Society Symposium Proceedings
T2 - 2005 Materials Research Society Fall Meeting
Y2 - 28 November 2005 through 1 December 2005
ER -