Abstract
Bulk InAsN films and monolayer-InAsN/GaAs single quantum wells (SQWs) have been grown on GaAs(0 0 1) substrates at 500 °C or below by RF-plasma-assisted molecular beam epitaxy (RF-MBE). Bulk InAsN films with fairly uniform compositions as revealed by X-ray diffraction have been successfully obtained up to the N concentration as high as 5.48%. The N incorporation is enhanced with decreasing growth temperature as expected for the metastable alloy. The Burstein-Moss effect is dominant for the optical properties near the band edge in the bulk InAsN films, giving a blue-shift of absorption edge due to the degenerate electrons in the conduction band. In the InAsN/GaAs SQWs, however, the BM effect is well suppressed to show the red-shift of photoluminescence (PL) peak energy due to the bandgap narrowing with the N incorporation, which is the manifestation of the huge bandgap bowing commonly found in the III-V-N-type alloys. This interpretation is justified when the difference in the shape of the density-of-states (DOS) function between the bulk and SQW is properly taken into account.
Original language | English |
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Pages (from-to) | 254-258 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 278 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - 2005 May 1 |
Event | 13th International Conference on Molecular Beam Epitaxy - Duration: 2004 Aug 22 → 2004 Aug 27 |
Keywords
- A1. Optical properties
- A1. X-ray diffraction
- A3. Molecular beam epitaxy
- A3. Quantum wells
- A3. Thin film
- B1. Dilute nitrides
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry