Growth and characterization of GaSb/AlSb multiple quantum well structures on Si(111) and Si(001) substrates

H. Toyota, S. Fujie, M. Haneta, A. Mikami, T. Endoh, Y. Jinbo, N. Uchitomi

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)

Abstract

For the purpose of investigating their structural and optical properties, GaSb thin films and GaSb/AlSb multiple quantum well (MQW) structures were grown on Si(111) substrates. A GaSb/AlSb MQW structure was also grown on Si(001) substrate as a control sample. Surface morphologies and a XRD measurements of GaSb films grown on Si(111) substrates showed that the GaSb film with a 5 nm thick AlSb initiation layer has good crystal quality. Observation of the RHEED patterns of both MQWs suggests that both GaSb films are under tensile strain at growth temperature. In-plane XRD measurement of MQW on Si(111) showed that the (111) face of the GaSb film is aligned to the Si(111) surface upon rotation by 30°. Photoluminescence (PL) spectra consisting of two peaks at 1250∼1400 nm were observed for both MQWs.

Original languageEnglish
Pages (from-to)1345-1350
Number of pages6
JournalPhysics Procedia
Volume3
Issue number2
DOIs
Publication statusPublished - 2010 Jan 31
Event14th International Conference on Narrow Gap Semiconductors and Systems, NGS2-14 - Senda, Japan
Duration: 2009 Jul 132009 Jul 17

Keywords

  • GaSb
  • Molecular beam epitaxy
  • Multiple quantum well

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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