Growth and characterization of GaSb heteroepitaxial layers on Si(111) substrates

H. Toyota, T. Yasuda, T. Endoh, Y. Jinbo, N. Uchitomi

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8 Citations (Scopus)


We investigated the growth of GaSb layers and GaSb/-AlGaSb multiple quantum well (MQW) structures using an AlSb initiation layer on Si(111) substrates. The entire growth was monitored using reflection high-energy electron diffraction (RHEED). The GaSb epitaxial films and MQWstructures were characterized by X-ray diffraction (HRXRD), atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy. Our results suggest that high-quality (111)-oriented GaSb films with a mirror surface can be obtained using the present growth condition. The PL peak energy of the MQWs on Si(111) substrates is almost temperature independent up to ∼120 K and exhibits relatively smaller variation with temperature compared to that of the MQWs grown on Si(001) substrates.

Original languageEnglish
Pages (from-to)2769-2771
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number9
Publication statusPublished - 2008
Event34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan
Duration: 2007 Oct 152007 Oct 18

ASJC Scopus subject areas

  • Condensed Matter Physics


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