We investigated the growth of GaSb layers and GaSb/-AlGaSb multiple quantum well (MQW) structures using an AlSb initiation layer on Si(111) substrates. The entire growth was monitored using reflection high-energy electron diffraction (RHEED). The GaSb epitaxial films and MQWstructures were characterized by X-ray diffraction (HRXRD), atomic force microscopy (AFM) and photoluminescence (PL) spectroscopy. Our results suggest that high-quality (111)-oriented GaSb films with a mirror surface can be obtained using the present growth condition. The PL peak energy of the MQWs on Si(111) substrates is almost temperature independent up to ∼120 K and exhibits relatively smaller variation with temperature compared to that of the MQWs grown on Si(001) substrates.
|Number of pages||3|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2008|
|Event||34th International Symposium on Compound Semiconductors, ISCS-2007 - Kyoto, Japan|
Duration: 2007 Oct 15 → 2007 Oct 18
ASJC Scopus subject areas
- Condensed Matter Physics