Growth and characterization of gadolinium vanadate GdVO4 single crystals for laser applications

Kiyoshi Shimamura; Satoshi Uda; Vladimir V. Kochurikhin; Tetsuo Taniuchi; Tsuguo Fukuda

doi:10.1143/jjap.35.1832

Growth and characterization of gadolinium vanadate GdVO₄ single crystals for laser applications

Kiyoshi Shimamura, Satoshi Uda, Vladimir V. Kochurikhin, Tetsuo Taniuchi, Tsuguo Fukuda

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

59 Citations (Scopus)

Abstract

We have successfully grown Nd³⁺-doped gadolinium vanadate (Nd:GdVC₄) single crystals by a modified Czockralski method in which a high temperature gradient was maintained at the interface during growth. Step faceting occurred during crystal growth and the cause of the faceting is discussed in relation to the growth conditions. Laser diode (LD) pumped laser oscillations were demonstrated. The Nd:GdVO₄ single crystal showed superior lasing properties to Nd:YVO₄ and Nd:YAG single crystals.

Original language	English
Pages (from-to)	1832-1835
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	35
Issue number	3
DOIs	https://doi.org/10.1143/jjap.35.1832
Publication status	Published - 1996 Mar

Keywords

Growth instability
LD pumped laser
Lasing properties
Modified Czochralski method
Nd:GdVO
Step faceting

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.35.1832

Cite this

Growth and characterization of gadolinium vanadate GdVO₄ single crystals for laser applications. / Shimamura, Kiyoshi; Uda, Satoshi; Kochurikhin, Vladimir V.; Taniuchi, Tetsuo; Fukuda, Tsuguo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 3, 03.1996, p. 1832-1835.

Research output: Contribution to journal › Article › peer-review

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AU - Fukuda, Tsuguo

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