Growth and characterization of Ga1-xCrxN with high Cr content grown on ZnO templates

J. J. Kim, H. Makino, P. P. Chen, T. Suzuki, D. C. Oh, H. J. Ko, J. H. Chang, T. Hanada, T. Yao

Research output: Contribution to journalConference article

14 Citations (Scopus)

Abstract

We have grown Ga1-xCrxN epilayer films with high Cr content up to 10.1% on ZnO templates. The c-axis lattice constant is systematically contracted with increasing Cr content according to high resolution X-ray diffraction measurement. We have observed the coexistence of ferromagnetic and paramagnetic components in Ga1-xCrxN. Magnetic measurements have shown that the paramagnetic component is increased with increasing Cr content.

Original languageEnglish
Pages (from-to)2869-2873
Number of pages5
JournalPhysica Status Solidi C: Conferences
Issue number7
DOIs
Publication statusPublished - 2003 Dec 1
Event5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
Duration: 2003 May 252003 May 30

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Kim, J. J., Makino, H., Chen, P. P., Suzuki, T., Oh, D. C., Ko, H. J., Chang, J. H., Hanada, T., & Yao, T. (2003). Growth and characterization of Ga1-xCrxN with high Cr content grown on ZnO templates. Physica Status Solidi C: Conferences, (7), 2869-2873. https://doi.org/10.1002/pssc.200303281