Growth and characterization of Ga1-xCrxN with high Cr content grown on ZnO templates

J. J. Kim; H. Makino; P. P. Chen; T. Suzuki; D. C. Oh; H. J. Ko; J. H. Chang; T. Hanada; T. Yao

doi:10.1002/pssc.200303281

Growth and characterization of Ga_1-xCr_xN with high Cr content grown on ZnO templates

J. J. Kim, H. Makino, P. P. Chen, T. Suzuki, D. C. Oh, H. J. Ko, J. H. Chang, T. Hanada, T. Yao

Materials Design Division

Research output: Contribution to journal › Conference article › peer-review

14 Citations (Scopus)

Abstract

We have grown Ga_1-xCr_xN epilayer films with high Cr content up to 10.1% on ZnO templates. The c-axis lattice constant is systematically contracted with increasing Cr content according to high resolution X-ray diffraction measurement. We have observed the coexistence of ferromagnetic and paramagnetic components in Ga_1-xCr_xN. Magnetic measurements have shown that the paramagnetic component is increased with increasing Cr content.

Original language	English
Pages (from-to)	2869-2873
Number of pages	5
Journal	Physica Status Solidi C: Conferences
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200303281
Publication status	Published - 2003 Dec 1
Event	5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: 2003 May 25 → 2003 May 30

ASJC Scopus subject areas

Condensed Matter Physics

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@article{7bd77eaa0cf8493eb487d0078e3d8bfa,

title = "Growth and characterization of Ga1-xCrxN with high Cr content grown on ZnO templates",

abstract = "We have grown Ga1-xCrxN epilayer films with high Cr content up to 10.1% on ZnO templates. The c-axis lattice constant is systematically contracted with increasing Cr content according to high resolution X-ray diffraction measurement. We have observed the coexistence of ferromagnetic and paramagnetic components in Ga1-xCrxN. Magnetic measurements have shown that the paramagnetic component is increased with increasing Cr content.",

author = "Kim, {J. J.} and H. Makino and Chen, {P. P.} and T. Suzuki and Oh, {D. C.} and Ko, {H. J.} and Chang, {J. H.} and T. Hanada and T. Yao",

year = "2003",

month = dec,

day = "1",

doi = "10.1002/pssc.200303281",

language = "English",

pages = "2869--2873",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "7",

note = "5th International Conference on Nitride Semiconductors, ICNS 2003 ; Conference date: 25-05-2003 Through 30-05-2003",

}

TY - JOUR

T1 - Growth and characterization of Ga1-xCrxN with high Cr content grown on ZnO templates

AU - Kim, J. J.

AU - Makino, H.

AU - Chen, P. P.

AU - Suzuki, T.

AU - Oh, D. C.

AU - Ko, H. J.

AU - Chang, J. H.

AU - Hanada, T.

AU - Yao, T.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - We have grown Ga1-xCrxN epilayer films with high Cr content up to 10.1% on ZnO templates. The c-axis lattice constant is systematically contracted with increasing Cr content according to high resolution X-ray diffraction measurement. We have observed the coexistence of ferromagnetic and paramagnetic components in Ga1-xCrxN. Magnetic measurements have shown that the paramagnetic component is increased with increasing Cr content.

AB - We have grown Ga1-xCrxN epilayer films with high Cr content up to 10.1% on ZnO templates. The c-axis lattice constant is systematically contracted with increasing Cr content according to high resolution X-ray diffraction measurement. We have observed the coexistence of ferromagnetic and paramagnetic components in Ga1-xCrxN. Magnetic measurements have shown that the paramagnetic component is increased with increasing Cr content.

UR - http://www.scopus.com/inward/record.url?scp=84875117236&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875117236&partnerID=8YFLogxK

U2 - 10.1002/pssc.200303281

DO - 10.1002/pssc.200303281

M3 - Conference article

AN - SCOPUS:84875117236

SP - 2869

EP - 2873

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

IS - 7

T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003

Y2 - 25 May 2003 through 30 May 2003