Growth and characterization of cubic InGaN epilayers on 3C-SiC by RF MBE

T. Kitamura, S. H. Cho, Y. Ishida, T. Ide, X. Q. Shen, H. Nakanishi, S. Chichibu, H. Okumura

Research output: Contribution to journalConference articlepeer-review

22 Citations (Scopus)


We successfully grew cubic InGaN epilayers having the InN molar fraction up to 20% on 3C-SiC (0 0 1) substrates by radio frequency N2 plasma molecular beam epitaxy. Cubic InGaN epilayers of 200 nm thickness on cubic GaN were found to be strained by high resolution X-ray diffraction (XRD) reciprocal space measurement. On the other hand, 450 nm thick cubic InGaN epilayers on cubic GaN were fully relaxed. The photoluminescence (PL) emission from the cubic InGaN epilayers was clearly observed at room temperature. The energy of the PL emission was decreased nonlinearly with the increase of InN molar fraction, and that of a In0.20Ga0.80N epilayer was as low as 2.1 eV. We also attempted to fabricate cubic InGaN/GaN multiple quantum well structures. Several satellite peaks of the superstructure were observed by XRD, which indicates the excellent quality of superstructure and hetero-interface.

Original languageEnglish
Pages (from-to)471-475
Number of pages5
JournalJournal of Crystal Growth
Publication statusPublished - 2001 Jul 1
Externally publishedYes
Event11th International Conference on Molecular Beam Epitaxy - Bijing, China
Duration: 2000 Sep 112000 Sep 15


  • A1. X-ray diffraction
  • A3. Molecular beam epitaxy
  • A3. Quantum wells
  • B1. Nitrides
  • B2. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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