Growth and characterization of Ce:Gd3(Al, Ga)5O12 single crystals with various ratio of Ga to Al

H. Sato, T. Endo, Y. Usuki, T. Matsueda, K. Kamada, M. Yoshino, A. Yoshikawa

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

2-inch size Ce:GAGG single crystals with various ratio of Ga to Al (Ga/Al) were grown by the Cz method and the concentration of the grown crystals was measured by using EPMA. Scintillation properties such as light output, decay time and time resolution were evaluated and the dependence on the Ga/Al was characterized. As a result, the light output was reduced by increasing of the Ga/Al. On the other hand, the timing properties became worse by decreasing of the Ga/Al.

Original languageEnglish
Pages (from-to)361-364
Number of pages4
JournalJournal of Crystal Growth
Volume468
DOIs
Publication statusPublished - 2017 Jun 15

Keywords

  • A2. Czochralski method
  • B1. Gadolinium compounds
  • B1. Gallium compounds
  • B1. Oxides
  • B2. Scintillator materials
  • B3. Scintillators

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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