Growth and atomistic structure study of disordered SiGe mixed semiconductors

I. Yonenaga, M. Sakurai, M. H.F. Sluiter

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The atomistic structure of Czochralski-grown SixGei-x binary mixed semiconductor was studied experimentally and theoretically. By extended X-ray absorption fine structure (XAFS) studies it was found that bulk SiGe semiconductor is a random mixture and that the Ge-Ge, Ge-Si and Si-Si bond lengths maintain distinctly different lengths and vary in a linear fashion against the alloy composition across the whole composition range 0 < x < 1, in good agreement with expectations derived from the ab-inito electronic structure calculations. The result indicates that SiGe is a suitable model for a disorder mixed material and that the bond lengths and bond angles are distorted with the composition.

Original languageEnglish
Title of host publicationSupplement to THERMEC 2006, 5th International Conference on PROCESSING and MANUFACTURING OF ADVANCED MATERIALS, THERMEC 2006
PublisherTrans Tech Publications Ltd
Pages2043-2047
Number of pages5
EditionPART 2
ISBN (Print)0878494286, 9780878494286
DOIs
Publication statusPublished - 2007 Jan 1
Event5th International Conference on Processing and Manufacturing of Advanced Materials - THERMEC'2006 - Vancouver, Canada
Duration: 2006 Jul 42006 Jul 8

Publication series

NameMaterials Science Forum
NumberPART 2
Volume539-543
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Other

Other5th International Conference on Processing and Manufacturing of Advanced Materials - THERMEC'2006
CountryCanada
CityVancouver
Period06/7/406/7/8

Keywords

  • Disordered material
  • Local atomistic structure
  • Pauling-type structure
  • Random mixture
  • Silicon-germanium
  • Strain accommodation

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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