Growth and atomistic structure study of disordered SiGe mixed semiconductors

I. Yonenaga; M. Sakurai; M. H.F. Sluiter

doi:10.4028/0-87849-428-6.2043

Growth and atomistic structure study of disordered SiGe mixed semiconductors

I. Yonenaga, M. Sakurai, M. H.F. Sluiter

Materials Design Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The atomistic structure of Czochralski-grown Si_xGei-_x binary mixed semiconductor was studied experimentally and theoretically. By extended X-ray absorption fine structure (XAFS) studies it was found that bulk SiGe semiconductor is a random mixture and that the Ge-Ge, Ge-Si and Si-Si bond lengths maintain distinctly different lengths and vary in a linear fashion against the alloy composition across the whole composition range 0 < x < 1, in good agreement with expectations derived from the ab-inito electronic structure calculations. The result indicates that SiGe is a suitable model for a disorder mixed material and that the bond lengths and bond angles are distorted with the composition.

Original language	English
Title of host publication	Supplement to THERMEC 2006, 5th International Conference on PROCESSING and MANUFACTURING OF ADVANCED MATERIALS, THERMEC 2006
Publisher	Trans Tech Publications Ltd
Pages	2043-2047
Number of pages	5
Edition	PART 2
ISBN (Print)	0878494286, 9780878494286
DOIs	https://doi.org/10.4028/0-87849-428-6.2043
Publication status	Published - 2007 Jan 1
Event	5th International Conference on Processing and Manufacturing of Advanced Materials - THERMEC'2006 - Vancouver, Canada Duration: 2006 Jul 4 → 2006 Jul 8

Publication series

Name	Materials Science Forum
Number	PART 2
Volume	539-543
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	5th International Conference on Processing and Manufacturing of Advanced Materials - THERMEC'2006
Country/Territory	Canada
City	Vancouver
Period	06/7/4 → 06/7/8

Keywords

Disordered material
Local atomistic structure
Pauling-type structure
Random mixture
Silicon-germanium
Strain accommodation

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/0-87849-428-6.2043

Cite this

Yonenaga, I., Sakurai, M., & Sluiter, M. H. F. (2007). Growth and atomistic structure study of disordered SiGe mixed semiconductors. In Supplement to THERMEC 2006, 5th International Conference on PROCESSING and MANUFACTURING OF ADVANCED MATERIALS, THERMEC 2006 (PART 2 ed., pp. 2043-2047). (Materials Science Forum; Vol. 539-543, No. PART 2). Trans Tech Publications Ltd. https://doi.org/10.4028/0-87849-428-6.2043

Growth and atomistic structure study of disordered SiGe mixed semiconductors. / Yonenaga, I.; Sakurai, M.; Sluiter, M. H.F.

Supplement to THERMEC 2006, 5th International Conference on PROCESSING and MANUFACTURING OF ADVANCED MATERIALS, THERMEC 2006. PART 2. ed. Trans Tech Publications Ltd, 2007. p. 2043-2047 (Materials Science Forum; Vol. 539-543, No. PART 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yonenaga, I, Sakurai, M & Sluiter, MHF 2007, Growth and atomistic structure study of disordered SiGe mixed semiconductors. in Supplement to THERMEC 2006, 5th International Conference on PROCESSING and MANUFACTURING OF ADVANCED MATERIALS, THERMEC 2006. PART 2 edn, Materials Science Forum, no. PART 2, vol. 539-543, Trans Tech Publications Ltd, pp. 2043-2047, 5th International Conference on Processing and Manufacturing of Advanced Materials - THERMEC'2006, Vancouver, Canada, 06/7/4. https://doi.org/10.4028/0-87849-428-6.2043

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abstract = "The atomistic structure of Czochralski-grown SixGei-x binary mixed semiconductor was studied experimentally and theoretically. By extended X-ray absorption fine structure (XAFS) studies it was found that bulk SiGe semiconductor is a random mixture and that the Ge-Ge, Ge-Si and Si-Si bond lengths maintain distinctly different lengths and vary in a linear fashion against the alloy composition across the whole composition range 0 < x < 1, in good agreement with expectations derived from the ab-inito electronic structure calculations. The result indicates that SiGe is a suitable model for a disorder mixed material and that the bond lengths and bond angles are distorted with the composition.",

keywords = "Disordered material, Local atomistic structure, Pauling-type structure, Random mixture, Silicon-germanium, Strain accommodation",

author = "I. Yonenaga and M. Sakurai and Sluiter, {M. H.F.}",

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AU - Sakurai, M.

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N2 - The atomistic structure of Czochralski-grown SixGei-x binary mixed semiconductor was studied experimentally and theoretically. By extended X-ray absorption fine structure (XAFS) studies it was found that bulk SiGe semiconductor is a random mixture and that the Ge-Ge, Ge-Si and Si-Si bond lengths maintain distinctly different lengths and vary in a linear fashion against the alloy composition across the whole composition range 0 < x < 1, in good agreement with expectations derived from the ab-inito electronic structure calculations. The result indicates that SiGe is a suitable model for a disorder mixed material and that the bond lengths and bond angles are distorted with the composition.

AB - The atomistic structure of Czochralski-grown SixGei-x binary mixed semiconductor was studied experimentally and theoretically. By extended X-ray absorption fine structure (XAFS) studies it was found that bulk SiGe semiconductor is a random mixture and that the Ge-Ge, Ge-Si and Si-Si bond lengths maintain distinctly different lengths and vary in a linear fashion against the alloy composition across the whole composition range 0 < x < 1, in good agreement with expectations derived from the ab-inito electronic structure calculations. The result indicates that SiGe is a suitable model for a disorder mixed material and that the bond lengths and bond angles are distorted with the composition.

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KW - Local atomistic structure

KW - Pauling-type structure

KW - Random mixture

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KW - Strain accommodation

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Growth and atomistic structure study of disordered SiGe mixed semiconductors

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