Grown-in microdefects and photovoltaic characteristics of heavily Ge co-doped Czochralski-grown p-type silicon crystals

Mukannan Arivanandhan, Raira Gotoh, Kozo Fujiwara, Satoshi Uda, Yasuhiro Hayakawa, Makoto Konagai

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The minority carrier lifetime (MCL)/flow pattern defect of B and Ge co-doped Czochralski silicon (CZ-Si) was increased/decreased with the initial Ge concentration up to 3 × 1020 cm-3 and decreased/increased at higher Ge concentrations. Secco etch pit defects were increased in heavily (≥3 × 1020 cm-3) Ge co-doped CZ-Si (grown at low growth rate), which resulted in a low MCL. The influence of Ge on microdefect variation was relatively lower than the crystal growth rate in heavily Ge co-doped CZ-Si.

Original languageEnglish
Pages (from-to)686-689
Number of pages4
JournalScripta Materialia
Volume69
Issue number9
DOIs
Publication statusPublished - 2013 Nov

Keywords

  • B and Ge co-doping
  • Czochralski silicon
  • Grown-in microdefects
  • Minority carrier
  • lifetime

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

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