Grown-facet-dependent characteristics of silicon-on-insulator by lateral solid phase epitaxy

K. Kusukawa; M. Moniwa; E. Murakami; T. Warabisako; M. Miyao

doi:10.1063/1.99017

Grown-facet-dependent characteristics of silicon-on-insulator by lateral solid phase epitaxy

K. Kusukawa, M. Moniwa, E. Murakami, T. Warabisako, M. Miyao

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Electrical characteristics of Si layers on SiO₂ formed by seeded lateral solid phase epitaxy are evaluated using metal-oxide-semiconductor field-effect transistors (MOSFET's) fabricated in the layer. To evaluate the {110} and {111} facet grown areas separately, the locations of the MOSFET's are varied as a function of distance from the seeding region. Significant differences in electrical characteristics of the MOSFET's are observed depending on the single-crystal growth mode. A field-effect (electron) mobility of about 700 cm²/(V s) was obtained for n-channel MOSFET's fabricated in the {110} facet grown region. That for the {111} facet growth region was inadequate. The results indicate the possibility of applying the method for future three-dimensional device structures using a {110} facet grown region.

Original language	English
Pages (from-to)	1681-1683
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	20
DOIs	https://doi.org/10.1063/1.99017
Publication status	Published - 1988 Dec 1

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Electrical characteristics of Si layers on SiO2 formed by seeded lateral solid phase epitaxy are evaluated using metal-oxide-semiconductor field-effect transistors (MOSFET's) fabricated in the layer. To evaluate the {110} and {111} facet grown areas separately, the locations of the MOSFET's are varied as a function of distance from the seeding region. Significant differences in electrical characteristics of the MOSFET's are observed depending on the single-crystal growth mode. A field-effect (electron) mobility of about 700 cm2/(V s) was obtained for n-channel MOSFET's fabricated in the {110} facet grown region. That for the {111} facet growth region was inadequate. The results indicate the possibility of applying the method for future three-dimensional device structures using a {110} facet grown region.",

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AU - Kusukawa, K.

AU - Moniwa, M.

AU - Murakami, E.

AU - Warabisako, T.

AU - Miyao, M.

PY - 1988/12/1

Y1 - 1988/12/1

N2 - Electrical characteristics of Si layers on SiO2 formed by seeded lateral solid phase epitaxy are evaluated using metal-oxide-semiconductor field-effect transistors (MOSFET's) fabricated in the layer. To evaluate the {110} and {111} facet grown areas separately, the locations of the MOSFET's are varied as a function of distance from the seeding region. Significant differences in electrical characteristics of the MOSFET's are observed depending on the single-crystal growth mode. A field-effect (electron) mobility of about 700 cm2/(V s) was obtained for n-channel MOSFET's fabricated in the {110} facet grown region. That for the {111} facet growth region was inadequate. The results indicate the possibility of applying the method for future three-dimensional device structures using a {110} facet grown region.

AB - Electrical characteristics of Si layers on SiO2 formed by seeded lateral solid phase epitaxy are evaluated using metal-oxide-semiconductor field-effect transistors (MOSFET's) fabricated in the layer. To evaluate the {110} and {111} facet grown areas separately, the locations of the MOSFET's are varied as a function of distance from the seeding region. Significant differences in electrical characteristics of the MOSFET's are observed depending on the single-crystal growth mode. A field-effect (electron) mobility of about 700 cm2/(V s) was obtained for n-channel MOSFET's fabricated in the {110} facet grown region. That for the {111} facet growth region was inadequate. The results indicate the possibility of applying the method for future three-dimensional device structures using a {110} facet grown region.

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Grown-facet-dependent characteristics of silicon-on-insulator by lateral solid phase epitaxy

Abstract

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