Growing low-temperature, high-quality silicon-dioxide films by neutral-beam enhanced atomic-layer deposition

Hua Hsuan Chen; Susumu Toko; Daisuke Ohori; Takuya Ozaki; Mitsuya Utsuno; Tomohiro Kubota; Toshihisa Nozawa; Seiji Samukawa

doi:10.1088/1361-6463/ab484d

Growing low-temperature, high-quality silicon-dioxide films by neutral-beam enhanced atomic-layer deposition

Hua Hsuan Chen, Susumu Toko, Daisuke Ohori, Takuya Ozaki, Mitsuya Utsuno, Tomohiro Kubota, Toshihisa Nozawa, Seiji Samukawa

Innovative Energy Research Center

Research output: Contribution to journal › Article › peer-review

Abstract

A novel deposition technique, called 'neutral-beam enhanced atomic-layer deposition' (NB-EALD), was successfully used to form a high-quality SiO₂ layer by using a precursor (BDEAS) and an oxygen neutral beam at room temperature (30 °C). The results demonstrate a typical ALD process and good thickness control at angstrom level. It was found that the properties of the NBEALD-formed SiO₂ film (namely, chemical composition, surface roughness, uniformity, density, and wet etch rate) were almost equivalent to those of thermal SiO₂. It is concluded from this result that NBEALD is a promising candidate for high-quality and low-temperature ALD instead of plasma-enhanced ALD and thermal ALD.

Original language	English
Article number	015204
Journal	Journal of Physics D: Applied Physics
Volume	53
Issue number	1
DOIs	https://doi.org/10.1088/1361-6463/ab484d
Publication status	Published - 2020

Keywords

atomic layer deposition
neutral beam
silicon dioxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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Growing low-temperature, high-quality silicon-dioxide films by neutral-beam enhanced atomic-layer deposition. / Chen, Hua Hsuan; Toko, Susumu; Ohori, Daisuke; Ozaki, Takuya; Utsuno, Mitsuya; Kubota, Tomohiro; Nozawa, Toshihisa; Samukawa, Seiji.

In: Journal of Physics D: Applied Physics, Vol. 53, No. 1, 015204, 2020.

Research output: Contribution to journal › Article › peer-review

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keywords = "atomic layer deposition, neutral beam, silicon dioxide",

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AU - Ozaki, Takuya

AU - Utsuno, Mitsuya

AU - Kubota, Tomohiro

AU - Nozawa, Toshihisa

AU - Samukawa, Seiji

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