TY - JOUR
T1 - Growing low-temperature, high-quality silicon-dioxide films by neutral-beam enhanced atomic-layer deposition
AU - Chen, Hua Hsuan
AU - Toko, Susumu
AU - Ohori, Daisuke
AU - Ozaki, Takuya
AU - Utsuno, Mitsuya
AU - Kubota, Tomohiro
AU - Nozawa, Toshihisa
AU - Samukawa, Seiji
N1 - Publisher Copyright:
© 2019 IOP Publishing Ltd.
Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.
PY - 2020
Y1 - 2020
N2 - A novel deposition technique, called 'neutral-beam enhanced atomic-layer deposition' (NB-EALD), was successfully used to form a high-quality SiO2 layer by using a precursor (BDEAS) and an oxygen neutral beam at room temperature (30 °C). The results demonstrate a typical ALD process and good thickness control at angstrom level. It was found that the properties of the NBEALD-formed SiO2 film (namely, chemical composition, surface roughness, uniformity, density, and wet etch rate) were almost equivalent to those of thermal SiO2. It is concluded from this result that NBEALD is a promising candidate for high-quality and low-temperature ALD instead of plasma-enhanced ALD and thermal ALD.
AB - A novel deposition technique, called 'neutral-beam enhanced atomic-layer deposition' (NB-EALD), was successfully used to form a high-quality SiO2 layer by using a precursor (BDEAS) and an oxygen neutral beam at room temperature (30 °C). The results demonstrate a typical ALD process and good thickness control at angstrom level. It was found that the properties of the NBEALD-formed SiO2 film (namely, chemical composition, surface roughness, uniformity, density, and wet etch rate) were almost equivalent to those of thermal SiO2. It is concluded from this result that NBEALD is a promising candidate for high-quality and low-temperature ALD instead of plasma-enhanced ALD and thermal ALD.
KW - atomic layer deposition
KW - neutral beam
KW - silicon dioxide
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U2 - 10.1088/1361-6463/ab484d
DO - 10.1088/1361-6463/ab484d
M3 - Article
AN - SCOPUS:85076443309
VL - 53
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
SN - 0022-3727
IS - 1
M1 - 015204
ER -