Growing low-temperature, high-quality silicon-dioxide films by neutral-beam enhanced atomic-layer deposition

Hua Hsuan Chen, Susumu Toko, Daisuke Ohori, Takuya Ozaki, Mitsuya Utsuno, Tomohiro Kubota, Toshihisa Nozawa, Seiji Samukawa

Research output: Contribution to journalArticlepeer-review

Abstract

A novel deposition technique, called 'neutral-beam enhanced atomic-layer deposition' (NB-EALD), was successfully used to form a high-quality SiO2 layer by using a precursor (BDEAS) and an oxygen neutral beam at room temperature (30 °C). The results demonstrate a typical ALD process and good thickness control at angstrom level. It was found that the properties of the NBEALD-formed SiO2 film (namely, chemical composition, surface roughness, uniformity, density, and wet etch rate) were almost equivalent to those of thermal SiO2. It is concluded from this result that NBEALD is a promising candidate for high-quality and low-temperature ALD instead of plasma-enhanced ALD and thermal ALD.

Original languageEnglish
Article number015204
JournalJournal of Physics D: Applied Physics
Volume53
Issue number1
DOIs
Publication statusPublished - 2020

Keywords

  • atomic layer deposition
  • neutral beam
  • silicon dioxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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