Growing low-temperature, high-quality silicon-dioxide films by neutral-beam enhanced atomic-layer deposition

Hua Hsuan Chen; Susumu Toko; Daisuke Ohori; Takuya Ozaki; Mitsuya Utsuno; Tomohiro Kubota; Toshihisa Nozawa; Seiji Samukawa

doi:10.1088/1361-6463/ab484d

Growing low-temperature, high-quality silicon-dioxide films by neutral-beam enhanced atomic-layer deposition

Hua Hsuan Chen, Susumu Toko, Daisuke Ohori, Takuya Ozaki, Mitsuya Utsuno, Tomohiro Kubota, Toshihisa Nozawa, Seiji Samukawa

Innovative Energy Research Center

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A novel deposition technique, called 'neutral-beam enhanced atomic-layer deposition' (NB-EALD), was successfully used to form a high-quality SiO₂ layer by using a precursor (BDEAS) and an oxygen neutral beam at room temperature (30 °C). The results demonstrate a typical ALD process and good thickness control at angstrom level. It was found that the properties of the NBEALD-formed SiO₂ film (namely, chemical composition, surface roughness, uniformity, density, and wet etch rate) were almost equivalent to those of thermal SiO₂. It is concluded from this result that NBEALD is a promising candidate for high-quality and low-temperature ALD instead of plasma-enhanced ALD and thermal ALD.

Original language	English
Article number	015204
Journal	Journal of Physics D: Applied Physics
Volume	53
Issue number	1
DOIs	https://doi.org/10.1088/1361-6463/ab484d
Publication status	Published - 2020

Keywords

atomic layer deposition
neutral beam
silicon dioxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/1361-6463/ab484d

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Growing low-temperature, high-quality silicon-dioxide films by neutral-beam enhanced atomic-layer deposition. / Chen, Hua Hsuan; Toko, Susumu; Ohori, Daisuke; Ozaki, Takuya; Utsuno, Mitsuya; Kubota, Tomohiro; Nozawa, Toshihisa; Samukawa, Seiji.

In: Journal of Physics D: Applied Physics, Vol. 53, No. 1, 015204, 2020.

Research output: Contribution to journal › Article › peer-review

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title = "Growing low-temperature, high-quality silicon-dioxide films by neutral-beam enhanced atomic-layer deposition",

abstract = "A novel deposition technique, called 'neutral-beam enhanced atomic-layer deposition' (NB-EALD), was successfully used to form a high-quality SiO2 layer by using a precursor (BDEAS) and an oxygen neutral beam at room temperature (30 °C). The results demonstrate a typical ALD process and good thickness control at angstrom level. It was found that the properties of the NBEALD-formed SiO2 film (namely, chemical composition, surface roughness, uniformity, density, and wet etch rate) were almost equivalent to those of thermal SiO2. It is concluded from this result that NBEALD is a promising candidate for high-quality and low-temperature ALD instead of plasma-enhanced ALD and thermal ALD.",

keywords = "atomic layer deposition, neutral beam, silicon dioxide",

author = "Chen, {Hua Hsuan} and Susumu Toko and Daisuke Ohori and Takuya Ozaki and Mitsuya Utsuno and Tomohiro Kubota and Toshihisa Nozawa and Seiji Samukawa",

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AU - Chen, Hua Hsuan

AU - Toko, Susumu

AU - Ohori, Daisuke

AU - Ozaki, Takuya

AU - Utsuno, Mitsuya

AU - Kubota, Tomohiro

AU - Nozawa, Toshihisa

AU - Samukawa, Seiji

PY - 2020

Y1 - 2020

N2 - A novel deposition technique, called 'neutral-beam enhanced atomic-layer deposition' (NB-EALD), was successfully used to form a high-quality SiO2 layer by using a precursor (BDEAS) and an oxygen neutral beam at room temperature (30 °C). The results demonstrate a typical ALD process and good thickness control at angstrom level. It was found that the properties of the NBEALD-formed SiO2 film (namely, chemical composition, surface roughness, uniformity, density, and wet etch rate) were almost equivalent to those of thermal SiO2. It is concluded from this result that NBEALD is a promising candidate for high-quality and low-temperature ALD instead of plasma-enhanced ALD and thermal ALD.

AB - A novel deposition technique, called 'neutral-beam enhanced atomic-layer deposition' (NB-EALD), was successfully used to form a high-quality SiO2 layer by using a precursor (BDEAS) and an oxygen neutral beam at room temperature (30 °C). The results demonstrate a typical ALD process and good thickness control at angstrom level. It was found that the properties of the NBEALD-formed SiO2 film (namely, chemical composition, surface roughness, uniformity, density, and wet etch rate) were almost equivalent to those of thermal SiO2. It is concluded from this result that NBEALD is a promising candidate for high-quality and low-temperature ALD instead of plasma-enhanced ALD and thermal ALD.

KW - atomic layer deposition

KW - neutral beam

KW - silicon dioxide

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Growing low-temperature, high-quality silicon-dioxide films by neutral-beam enhanced atomic-layer deposition

Abstract

Keywords

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