Group-IV semiconductor quantum heterointegration by low-energy plasma CVD processing

Masao Sakuraba, Junichi Murota

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Low-energy plasma CVD processing is expected to be effective in application of high-performance group-IV semiconductor heterodevices under suppression of dislocation generation and intermixing, i.e. group IV semiconductor quantum heterointegration on Si large scale integrated circuits. Recent progress in (A) development of room-temperature resonant-tunneling diode using group-IV semiconductors and (B) low-energy plasma CVD processing for group-IV semiconductor quantum heterointegration are reviewed.

Original languageEnglish
Pages (from-to)195-200
Number of pages6
JournalECS Transactions
Volume58
Issue number9
DOIs
Publication statusPublished - 2013 Jan 1

ASJC Scopus subject areas

  • Engineering(all)

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