Greenish-white electroluminescence from p-type CuGaS2 heterojunction diodes using n-type ZnO as an electron injector

S. F. Chichibu; T. Ohmori; N. Shibata; T. Koyama; T. Onuma

doi:10.1063/1.1818333

Greenish-white electroluminescence from p-type CuGaS₂ heterojunction diodes using n-type ZnO as an electron injector

S. F. Chichibu, T. Ohmori, N. Shibata, T. Koyama, T. Onuma

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

Greenish-white electroluminescence (EL) was observed from p-type (001) CuGaS₂ chalcopyrite semiconductor epilayers grown on a (001) GaP substrate by metalorganic vapor phase epitaxy, due to the electron injection from preferentially (0001)-oriented polycrystalline n-type ZnO thin films deposited by the surface-damage-free helicon-wave-excited-plasma sputtering method. The structure was designed to enable the electron injection from n-type wide band gap partner for p-CuGaS₂ forming the ZnO/CuGaS₂ TYPE-I heterojunction. The EL spectra exhibited emission peaks and bands between 1.6 and 2.5 eV, although the higher energy portion was absorbed by the GaP substrate. Since the spectral line shape resembled that of the photoluminescence from the identical CuGaS₂ epilayers, the EL was assigned to originate from pCuGaS₂.

Original language	English
Pages (from-to)	4403-4405
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	19
DOIs	https://doi.org/10.1063/1.1818333
Publication status	Published - 2004 Nov 8
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Greenish-white electroluminescence from p-type CuGaS2 heterojunction diodes using n-type ZnO as an electron injector",

abstract = "Greenish-white electroluminescence (EL) was observed from p-type (001) CuGaS2 chalcopyrite semiconductor epilayers grown on a (001) GaP substrate by metalorganic vapor phase epitaxy, due to the electron injection from preferentially (0001)-oriented polycrystalline n-type ZnO thin films deposited by the surface-damage-free helicon-wave-excited-plasma sputtering method. The structure was designed to enable the electron injection from n-type wide band gap partner for p-CuGaS2 forming the ZnO/CuGaS2 TYPE-I heterojunction. The EL spectra exhibited emission peaks and bands between 1.6 and 2.5 eV, although the higher energy portion was absorbed by the GaP substrate. Since the spectral line shape resembled that of the photoluminescence from the identical CuGaS2 epilayers, the EL was assigned to originate from pCuGaS2.",

author = "Chichibu, {S. F.} and T. Ohmori and N. Shibata and T. Koyama and T. Onuma",

note = "Funding Information: The authors would like to thank Professor S. Shirakata and Professor H. Nakanishi for fruitful discussions. They would like to thank Trichemical Laboratory and Sanyu Denshi Corporation for continuous encouragement. This work was supported in part by the 21st Century COE program “Promotion of Creative Interdisciplinary Materials Science for Novel Functions” and Grant-in-Aid for Scientific Research Nos. 15656080 and 16360146 under MEXT, Japan.",

year = "2004",

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doi = "10.1063/1.1818333",

language = "English",

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T1 - Greenish-white electroluminescence from p-type CuGaS2 heterojunction diodes using n-type ZnO as an electron injector

AU - Chichibu, S. F.

AU - Ohmori, T.

AU - Shibata, N.

AU - Koyama, T.

AU - Onuma, T.

N1 - Funding Information: The authors would like to thank Professor S. Shirakata and Professor H. Nakanishi for fruitful discussions. They would like to thank Trichemical Laboratory and Sanyu Denshi Corporation for continuous encouragement. This work was supported in part by the 21st Century COE program “Promotion of Creative Interdisciplinary Materials Science for Novel Functions” and Grant-in-Aid for Scientific Research Nos. 15656080 and 16360146 under MEXT, Japan.

PY - 2004/11/8

Y1 - 2004/11/8

N2 - Greenish-white electroluminescence (EL) was observed from p-type (001) CuGaS2 chalcopyrite semiconductor epilayers grown on a (001) GaP substrate by metalorganic vapor phase epitaxy, due to the electron injection from preferentially (0001)-oriented polycrystalline n-type ZnO thin films deposited by the surface-damage-free helicon-wave-excited-plasma sputtering method. The structure was designed to enable the electron injection from n-type wide band gap partner for p-CuGaS2 forming the ZnO/CuGaS2 TYPE-I heterojunction. The EL spectra exhibited emission peaks and bands between 1.6 and 2.5 eV, although the higher energy portion was absorbed by the GaP substrate. Since the spectral line shape resembled that of the photoluminescence from the identical CuGaS2 epilayers, the EL was assigned to originate from pCuGaS2.

AB - Greenish-white electroluminescence (EL) was observed from p-type (001) CuGaS2 chalcopyrite semiconductor epilayers grown on a (001) GaP substrate by metalorganic vapor phase epitaxy, due to the electron injection from preferentially (0001)-oriented polycrystalline n-type ZnO thin films deposited by the surface-damage-free helicon-wave-excited-plasma sputtering method. The structure was designed to enable the electron injection from n-type wide band gap partner for p-CuGaS2 forming the ZnO/CuGaS2 TYPE-I heterojunction. The EL spectra exhibited emission peaks and bands between 1.6 and 2.5 eV, although the higher energy portion was absorbed by the GaP substrate. Since the spectral line shape resembled that of the photoluminescence from the identical CuGaS2 epilayers, the EL was assigned to originate from pCuGaS2.

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Greenish-white electroluminescence from p-type CuGaS₂ heterojunction diodes using n-type ZnO as an electron injector

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