Greenish-white electroluminescence from p-type CuGaS2 heterojunction diodes using n-type ZnO as an electron injector

S. F. Chichibu, T. Ohmori, N. Shibata, T. Koyama, T. Onuma

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)

Abstract

Greenish-white electroluminescence (EL) was observed from p-type (001) CuGaS2 chalcopyrite semiconductor epilayers grown on a (001) GaP substrate by metalorganic vapor phase epitaxy, due to the electron injection from preferentially (0001)-oriented polycrystalline n-type ZnO thin films deposited by the surface-damage-free helicon-wave-excited-plasma sputtering method. The structure was designed to enable the electron injection from n-type wide band gap partner for p-CuGaS2 forming the ZnO/CuGaS2 TYPE-I heterojunction. The EL spectra exhibited emission peaks and bands between 1.6 and 2.5 eV, although the higher energy portion was absorbed by the GaP substrate. Since the spectral line shape resembled that of the photoluminescence from the identical CuGaS2 epilayers, the EL was assigned to originate from pCuGaS2.

Original languageEnglish
Pages (from-to)4403-4405
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number19
DOIs
Publication statusPublished - 2004 Nov 8
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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