TY - JOUR
T1 - Green to ultraviolet photoluminescence from CuAlxGa1-xS2 chalcopyrite semiconductor heteroepitaxial alloys grown by low-pressure metalorganic vapor phase epitaxy
AU - Harada, Yoshiyuki
AU - Nakanishi, Hisayuki
AU - Chichibu, Shigefusa F.
N1 - Funding Information:
The authors would like to thank Professor S. Shirakata for stimulating discussions. The encouragement by Professor S. Matsumoto is gratefully acknowledged. They wish to thank Y. Takaoka and T. Mitani of Keio Central Research Laboratories for technical assistance. They also wish to thank A. Iwai, F. Ishihara, R. Sudo, M. Uchida, T. Wakiyama, K. Haga and S. Sakai for their help in experiments. This work was supported in part by The Foundation of Ando Laboratory, The Futaba Corporation, The Murata Science Foundation (No. 941135), The Casio Science Promotion Foundation (No. 12-19), a Sasagawa Scientific Research Grant from the Japan Science Society and the Ministry of Education, Science, Sports and Culture under a Grant-in-Aid for Scientific Research (No.07750370).
PY - 2001/8
Y1 - 2001/8
N2 - CuAlxGa1-xS2 alloy films were successfully grown on GaAs and GaP substrates by low-pressure metalorganic vapor phase epitaxy. All CuAlxGa1-xS2 layers exhibited near-band-edge photoluminescence peaks related to free or bound excitons at 77 and 300 K, which were assigned based on the results of photoreflectance measurements. These excitonic emissions cover the spectral ranges from green to ultraviolet in color by changing CuAlS2 mole fraction x. The alloy composition was well-controlled using triisobutylaluminum and normal-tripropylgallium as source precursors. All alloy layers were of high quality and had a single domain structure with their c-axes normal to the surface of both GaAs(0 0 1) and GaP(0 0 1) substrates. A remarkable residual tensile biaxial strain was found in the films on both the substrates, which is mainly due to the thermal stress. The strain subsequently caused the increase of the crystal-field splittings in the valence bands. CuAlxGa1-xS2 was shown to have a potential as a proper material for visible and UV light-emitting devices.
AB - CuAlxGa1-xS2 alloy films were successfully grown on GaAs and GaP substrates by low-pressure metalorganic vapor phase epitaxy. All CuAlxGa1-xS2 layers exhibited near-band-edge photoluminescence peaks related to free or bound excitons at 77 and 300 K, which were assigned based on the results of photoreflectance measurements. These excitonic emissions cover the spectral ranges from green to ultraviolet in color by changing CuAlS2 mole fraction x. The alloy composition was well-controlled using triisobutylaluminum and normal-tripropylgallium as source precursors. All alloy layers were of high quality and had a single domain structure with their c-axes normal to the surface of both GaAs(0 0 1) and GaP(0 0 1) substrates. A remarkable residual tensile biaxial strain was found in the films on both the substrates, which is mainly due to the thermal stress. The strain subsequently caused the increase of the crystal-field splittings in the valence bands. CuAlxGa1-xS2 was shown to have a potential as a proper material for visible and UV light-emitting devices.
KW - A1. Photoluminescence
KW - A1. Stresses
KW - A3. Metalorganic vapor phase epitaxy
KW - B1. Chalcopyrite compounds
KW - B2. Semiconducting quaternary alloys
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U2 - 10.1016/S0022-0248(01)01409-9
DO - 10.1016/S0022-0248(01)01409-9
M3 - Article
AN - SCOPUS:0035426882
VL - 226
SP - 473
EP - 480
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 4
ER -