A grating-bicoupled plasmon-resonant terahertz emitter was fabricated using InGaPInGaAsGaAs heterostructure material systems. The device structure is based on a high-electron mobility transistor and incorporates doubly interdigitated grating gates that periodically localize the two-dimensional (2D) plasmon in 100 nm regions with a submicron interval. Photoexcited electrons, injected to the 2D plasmon cavities, extensively promoted the plasmon instability, resulting in observation of emission of terahertz electromagnetic radiation at room temperature.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)