Grating-bicoupled plasmon-resonant terahertz emitter fabricated with GaAs-based heterostructure material systems

Taiichi Otsuji, Yahya Moubarak Meziani, Mitsuhiro Hanabe, Takuma Ishibashi, Tomohiro Uno, Eiichi Sano

Research output: Contribution to journalArticlepeer-review

61 Citations (Scopus)

Abstract

A grating-bicoupled plasmon-resonant terahertz emitter was fabricated using InGaPInGaAsGaAs heterostructure material systems. The device structure is based on a high-electron mobility transistor and incorporates doubly interdigitated grating gates that periodically localize the two-dimensional (2D) plasmon in 100 nm regions with a submicron interval. Photoexcited electrons, injected to the 2D plasmon cavities, extensively promoted the plasmon instability, resulting in observation of emission of terahertz electromagnetic radiation at room temperature.

Original languageEnglish
Article number263502
JournalApplied Physics Letters
Volume89
Issue number26
DOIs
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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