Graphoepitaxy of sexithiophene on thermally oxidized silicon surface with artificial periodic grooves

Susumu Ikeda, Koichiro Saiki, Ken Tsutsui, Tomohiko Edura, Yasuo Wada, Hiroyuki Miyazoe, Kazuo Terashima, Katsuhiko Inaba, Toru Mitsunaga, Toshihiro Shimada

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Abstract

Graphoepitaxial growth of a sexithiophene (6T) thin film was achieved on a thermally oxidized silicon surface with artificial periodic grooves, The surface structure was fabricated by electron beam lithography and the thin film was grown by molecular beam deposition. A well-pronounced, in-plane oriented component ([010]6T|| grooves) was identified by grazing incidence x-ray diffraction, though there also existed some randomly oriented 6T grains, Presence of the graphoepitaxial component was also confirmed by results of the orientational analysis of atomic force microscopy images. It was shown that the in-plane orientation control of organic semiconductors is possible using graphoepitaxy.

Original languageEnglish
Article number251905
JournalApplied Physics Letters
Volume88
Issue number25
DOIs
Publication statusPublished - 2006 Jun 19
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Ikeda, S., Saiki, K., Tsutsui, K., Edura, T., Wada, Y., Miyazoe, H., Terashima, K., Inaba, K., Mitsunaga, T., & Shimada, T. (2006). Graphoepitaxy of sexithiophene on thermally oxidized silicon surface with artificial periodic grooves. Applied Physics Letters, 88(25), [251905]. https://doi.org/10.1063/1.2216375