Graphene/SiC/Si FETs with SiCN gate stack

T. Suemitsu, M. Kubo, H. Handa, R. Takahashi, H. Fukidome, M. Suemitsu, T. Otsuji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

Graphene-on-silicon field-effect transistors (GOSFETs) are studied as a candidate of next generation transistors. Graphene is formed on SiC layers grown on Si substrates. As well as the channel material, the gate stack is also a key component of FETs. In this study, SiCN deposited by plasma-enhanced chemical vapor deposition (PECVD) using hexamethyldisilazane (HMDS) vapor is studied. During PECVD, hydrogen is used as a carrier gas in addition to HMDS vapor. This becomes an advantage in the graphene process because hydrogen has cleaning effect on graphene surface. To verify this effect, SiCN gate stack is applied to the graphene on SiC substrates. FETs with SiCN gate stack exhibit clearer ambipolar characteristics and larger drain current density than FETs with conventional SiN gate stack. The SiCN gate stack is also applied to GOSFETs. Resulting devices also exhibit ambipolar characteristics and larger current density than previously reported GOSFETs with SiN gate stack.

Original languageEnglish
Title of host publicationState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53
PublisherElectrochemical Society Inc.
Pages249-254
Number of pages6
Edition6
ISBN (Electronic)9781607682608
ISBN (Print)9781566779067
DOIs
Publication statusPublished - 2011
EventState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting - Boston, MA, United States
Duration: 2011 Oct 92011 Oct 14

Publication series

NameECS Transactions
Number6
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherState-of-the-Art Program on Compound Semiconductors 53, SOTAPOCS 53 - 220th ECS Meeting
Country/TerritoryUnited States
CityBoston, MA
Period11/10/911/10/14

ASJC Scopus subject areas

  • Engineering(all)

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