Graphene formation on a 3C-SiC(111) thin film grown on Si(110) substrate

Maki Suemitsu; Yu Miyamoto; Hiroyuki Handa; Atsushi Konno

doi:10.1380/ejssnt.2009.311

Graphene formation on a 3C-SiC(111) thin film grown on Si(110) substrate

Maki Suemitsu, Yu Miyamoto, Hiroyuki Handa, Atsushi Konno

Information Devices Division

Research output: Contribution to journal › Article › peer-review

93 Citations (Scopus)

Abstract

With its industrial adaptability, epitaxial graphene (EG), formed by a UHV annealing of SiC substrates, is attracting recent attention. While hexagonal SiC bulk substrates have been solely used for this purpose, benefits in use of 3C-SiC virtual substrate founded on Si substrates could be enormous. We have succeeded in fabricating a graphene film on a 3C-SiC(111) virtual substrate, which was preformed on a Si(110) substrate by gas-source molecular beam epitaxy using monomethyl silane. The geometrical matching in this configuration greatly suppresses the strain in the SiC film, which is related to this successful formation of graphene.

Original language	English
Pages (from-to)	311-313
Number of pages	3
Journal	e-Journal of Surface Science and Nanotechnology
Volume	7
DOIs	https://doi.org/10.1380/ejssnt.2009.311
Publication status	Published - 2009 Apr 4

Keywords

Graphite
Molecular beam epitaxy
Raman scattering spectroscopy
Silicon
Silicon carbide

ASJC Scopus subject areas

Biotechnology
Bioengineering
Condensed Matter Physics
Mechanics of Materials
Surfaces and Interfaces
Surfaces, Coatings and Films

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AU - Konno, Atsushi

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