Abstract
With its industrial adaptability, epitaxial graphene (EG), formed by a UHV annealing of SiC substrates, is attracting recent attention. While hexagonal SiC bulk substrates have been solely used for this purpose, benefits in use of 3C-SiC virtual substrate founded on Si substrates could be enormous. We have succeeded in fabricating a graphene film on a 3C-SiC(111) virtual substrate, which was preformed on a Si(110) substrate by gas-source molecular beam epitaxy using monomethyl silane. The geometrical matching in this configuration greatly suppresses the strain in the SiC film, which is related to this successful formation of graphene.
| Original language | English |
|---|---|
| Pages (from-to) | 311-313 |
| Number of pages | 3 |
| Journal | e-Journal of Surface Science and Nanotechnology |
| Volume | 7 |
| DOIs | |
| Publication status | Published - 2009 Apr 4 |
Keywords
- Graphite
- Molecular beam epitaxy
- Raman scattering spectroscopy
- Silicon
- Silicon carbide
ASJC Scopus subject areas
- Biotechnology
- Bioengineering
- Condensed Matter Physics
- Mechanics of Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films