Graphene formation on a 3C-SiC(111) thin film grown on Si(110) substrate

Maki Suemitsu, Yu Miyamoto, Hiroyuki Handa, Atsushi Konno

Research output: Contribution to journalArticlepeer-review

98 Citations (Scopus)


With its industrial adaptability, epitaxial graphene (EG), formed by a UHV annealing of SiC substrates, is attracting recent attention. While hexagonal SiC bulk substrates have been solely used for this purpose, benefits in use of 3C-SiC virtual substrate founded on Si substrates could be enormous. We have succeeded in fabricating a graphene film on a 3C-SiC(111) virtual substrate, which was preformed on a Si(110) substrate by gas-source molecular beam epitaxy using monomethyl silane. The geometrical matching in this configuration greatly suppresses the strain in the SiC film, which is related to this successful formation of graphene.

Original languageEnglish
Pages (from-to)311-313
Number of pages3
Journale-Journal of Surface Science and Nanotechnology
Publication statusPublished - 2009 Apr 4


  • Graphite
  • Molecular beam epitaxy
  • Raman scattering spectroscopy
  • Silicon
  • Silicon carbide

ASJC Scopus subject areas

  • Biotechnology
  • Bioengineering
  • Condensed Matter Physics
  • Mechanics of Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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