TY - GEN
T1 - Graphene FETs
T2 - 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013
AU - Suemitsu, Maki
PY - 2013/11/22
Y1 - 2013/11/22
N2 - Current status and future outlook of graphene-based FETs (GFETs) have been reviewed. While its digital applications may find various challenges due mainly from the lack of the band gap, analog (RF) applications should be promising for GFETs. To fully enjoy the excellent transport properties of intrinsic graphene, we need to fully develop extrinsic technologies such as choice of the substrate, gate insulator, metal electrodes.
AB - Current status and future outlook of graphene-based FETs (GFETs) have been reviewed. While its digital applications may find various challenges due mainly from the lack of the band gap, analog (RF) applications should be promising for GFETs. To fully enjoy the excellent transport properties of intrinsic graphene, we need to fully develop extrinsic technologies such as choice of the substrate, gate insulator, metal electrodes.
UR - http://www.scopus.com/inward/record.url?scp=84887835155&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84887835155&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:84887835155
SN - 9784863483118
T3 - Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013
SP - 59
EP - 62
BT - Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices
Y2 - 2 July 2013 through 5 July 2013
ER -