Abstract
Current status and future outlook of graphene-based FETs (GFETs) have been reviewed. While its digital applications may find various challenges due mainly from the lack of the band gap, analog (RF) applications should be promising for GFETs. To fully enjoy the excellent transport properties of intrinsic graphene, we need to fully develop extrinsic technologies such as choice of the substrate, gate insulator, metal electrodes.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices |
| Subtitle of host publication | TFT Technologies and FPD Materials, AM-FPD 2013 |
| Pages | 59-62 |
| Number of pages | 4 |
| Publication status | Published - 2013 Nov 22 |
| Event | 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013 - Kyoto, Japan Duration: 2013 Jul 2 → 2013 Jul 5 |
Publication series
| Name | Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013 |
|---|
Other
| Other | 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013 |
|---|---|
| Country | Japan |
| City | Kyoto |
| Period | 13/7/2 → 13/7/5 |
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
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Cite this
Suemitsu, M. (2013). Graphene FETs: Issues and prospects. In Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013 (pp. 59-62). [6617777] (Proceedings of the 20th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2013).