Graphene-channel-transistor terahertz amplifier

Stephane Boubanga-Tombet, Deepika Yadav, Wojciech Knap, Vyacheslav V. Popov, Taiichi Otsuji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The generation and amplification of terahertz (THz) electromagnetic waves by plasmonic instabilities in conventional two-dimensional (2D) electron systems (2DESs) have been actively investigated since 1980 [1]. However, after about forty years, we are still a long way from the realization of efficient emitters and amplifiers [2]. The rise of graphene and its extremely strong light-plasmon coupling and superior carrier transport properties make this work worth to be revisited [3]. We investigate dc current driven plasmonic instabilities in high mobility graphene-channel field-effect transistors (GFETs) working for tunable THz amplifier at room temperature (RT).

Original languageEnglish
Title of host publication2018 76th Device Research Conference, DRC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781538630280
DOIs
Publication statusPublished - 2018 Aug 20
Event76th Device Research Conference, DRC 2018 - Santa Barbara, United States
Duration: 2018 Jun 242018 Jun 27

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2018-June
ISSN (Print)1548-3770

Other

Other76th Device Research Conference, DRC 2018
CountryUnited States
CitySanta Barbara
Period18/6/2418/6/27

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Graphene-channel-transistor terahertz amplifier'. Together they form a unique fingerprint.

Cite this