Grain growth of polycrystalline Si thin film for solar cells and its effect on crystal properties

Toru Ujihara, Eiji Kanda, Kozo Fujiwara, Gen Sazaki, Noritaka Usami, Yoshihiro Murakami, Kuninori Kitahara, Kazuo Nakajima

Research output: Contribution to journalConference article

Abstract

In this study, in order to inquire into the principle of the fabrication of the poly-Si film via the grain growth process, we clarified the grain growth mechanism of the thin film for the solar cell by investigating temporal change of the grain size distribution. Moreover, this process was explained by a theoretical model taking two- and three- dimensional growth modes into account. In addition, the crystal quality was evaluated using Raman spectroscopy. The quality was very high comparing with the film prepared by the laser annealing technique.

Original languageEnglish
Pages (from-to)1339-1342
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
Publication statusPublished - 2002 Dec 1
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: 2002 May 192002 May 24

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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