In order to investigate the effect of grain boundary structure on the high-temperature strength of SiC, three kinds of SiC materials were prepared by pressureless sintering; material A with sintering aids of B plus C, material B with B plus C plus AlN, and material C without any sintering aid. Their strength was measured by three-point bending at temperatures from room temperature to 2070 K. The grain boundary structure was observed by HR-TEM. The results obtained are presented and analyzed.
|Number of pages||8|
|Journal||Yogyo Kyokai Shi/Journal of the Ceramic Society of Japan|
|Publication status||Published - 1987|
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